Native point defects and doping in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>ZnGeN</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

Skachkov, Dmitry; Jaroenjittichai, Atchara Punya; Huang, Ling-yi; Lambrecht, Walter R. L.

doi:10.1103/physrevb.93.155202

Cited by 47 publications

(39 citation statements)

References 36 publications

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“…This conclusion would also hold for similar cation-disordered systems such as ZnSnP 2 [22,23] and ZnGeN 2 [24] if the local charge neutrality is preserved. It is also notable that defects and impurities that show low formation energies simultaneously with deep levels do not exist when the Fermi level is located within the band gap.…”

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confidence: 85%

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

et al. 2018

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Zinc tin nitride (ZnSnN 2 ) is attracting growing interest as a nontoxic and earth-abundant photoabsorber for thin-film photovoltaics. Carrier transport in ZnSnN 2 and consequently cell performance are strongly affected by point defects with deep levels acting as carrier recombination centers. In this study, the point defects in ZnSnN 2 are revisited by careful first-principles modeling based on recent experimental and theoretical results. It is shown that ZnSnN 2 does not have low-energy defects with deep levels, in contrast to previously reported results. Therefore, ZnSnN 2 is more promising as a photoabsorber material than formerly considered.

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confidence: 85%

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

et al. 2018

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“…Compared to the corresponding diagram in ref. , the changes are that only Ge 3 N 4 limits the stability region since Zn 3 N 2 is now found to have positive energy of formation, and the fact that Ge 3 N 4 has less negative energy of formation and thus allows for a more Zn‐poor limit, indicated here by point C and a more Zn‐rich limit, point A. The former is especially important for the samples grown by the methods of ref.…”

Section: Stability Versus Competing Binariesmentioning

confidence: 86%

“…The point defects in ZnGeN 2 were reported in two of our previous papers, the first one addressing vacancies and antisites, while the second one addressed interstitials. Since then, one other study has been reported by Adamski et al Here we compare the results of the two studies and update some of our results in view of the updated chemical potential diagram discussed in the previous section.…”

Section: Point Defectsmentioning

confidence: 94%

“…In the present paper, we first provide a brief literature review, then we present some additional results complementing some of our recent papers and finally discuss the importance of cation disorder on the point defects in one of these materials, ZnGeN 2 . In particular, we use the present paper to compare our results with the recent paper by Adamski et al…”

Section: Introductionmentioning

confidence: 89%

“…In ref. we used an effective charge q eff rather than the nominal charge to calculate the image charge correction and alignment potential corrections. This is mainly important for shallow defects, where part of the net charge density of the defect is not localized but spread out over the whole cell.…”

Section: Point Defectsmentioning

confidence: 99%

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Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N₂ Semiconductors

Lyu

Skachkov

Kash

et al. 2019

Physica Status Solidi (a)

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Recent work on heterovalent ternary nitrides, II‐IV‐N2, is reviewed. The authors first provide an overview of the relevant literature, then briefly discuss band gaps, band offsets and the effects and nature of disorder. The authors discuss the energies of formation and evaluate the stability or metastability with respect to competing binary compounds. The Cd‐IV‐N2 compounds are found to be only metastable. For ZnGeN2 we present a revised chemical potential stability region and discuss its effects on the point defect energies of formation. The authors briefly discuss the current status of understanding of the point defects and doping in ZnGeN2.

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Physical Properties Resemblance of Optical Material ZnGeN2 with GaN Under Different Higher Pressures

Chandra

Kumar

Singh

et al. 2022

Lecture Notes in Electrical Engineering

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Native point defects and doping inZnGeN2

Cited by 47 publications

References 36 publications

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N₂ Semiconductors

Physical Properties Resemblance of Optical Material ZnGeN2 with GaN Under Different Higher Pressures

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Native point defects and doping inZnGeN2

Cited by 47 publications

References 36 publications

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

Electrically Benign Defect Behavior in Zinc Tin Nitride Revealed from First Principles

Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N2 Semiconductors

Physical Properties Resemblance of Optical Material ZnGeN2 with GaN Under Different Higher Pressures

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Product

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Band Gaps, Band‐Offsets, Disorder, Stability Region, and Point Defects in II‐IV‐N₂ Semiconductors