This article presents a systematic study of how point defects, such as SW-defects and vacancies, influence the properties of nanotubes. The DFT calculations show that large atomic relaxations at vacancies leads to a contraction of the nanotube. The formation energy ÓÖÑ , has a curvature, chirality and a family dependence, where ÓÖÑ is slightly lower in metallic compared to semiconducting nanotubes. Vacancies become electrically active due to defect states close to¯ and its population depend on the chirality and the position of¯ . A model based on the heat of formation of defective nanotubes furthermore provide an upper estimate for the defect concentration, which is in better agreement with values from AFM experiments than the standard equilibrium approximation.