Nature of the band gap of polycrystalline β-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>films

Giannini, Cinzia; Lagomarsino, S.; Scarinci, F.; Castrucci, P.

doi:10.1103/physrevb.45.8822

Cited by 123 publications

(41 citation statements)

References 9 publications

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“…The nature of the band gap of b-FeSi 2 has been the topic of controversy for years. Both indirect and direct gaps with a large energy range of 0.4-1.0 eV have been reported in theoretical and experimental papers [6][7][8][9][10]. Recent work shows that b-FeSi 2 has an indirect gap of a few tens of milli-electron-volts less than the first direct transition of appreciable oscillator strength located at the Y point in the Brillouin zone [11][12][13][14].…”

Section: Introductionmentioning

confidence: 92%

Phase transformation in FeSi2 nanowires

Liang

Smith

Bennett

2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 92%

Phase transformation in FeSi2 nanowires

Liang

Smith

Bennett

2006

Journal of Crystal Growth

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“…Only few experimental results 15,16 seem to indicate the existence of an indirect transition. Photoluminescence emission, which indicates a direct gap transition, has been reported by a number of workers for ␤-FeSi 2 layers grown by a variety of techniques.…”

Section: Introductionmentioning

confidence: 99%

Structure and electronic properties ofFeSi2

et al. 1998

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“…In the equation (1) Martineli et al [16] Ep(0) = 0.8052 eV, 600 and = 4.2 10 -4 eV/K also reported the same calculation by IBS sample. In our calculation we obtained that the Varshini's parameters are Ep(0) = 0.8085eV, 1.8 10 -4 eV/K and Their results reported very close similarity to our results obtained from 20-hr-annealed sample.…”

Section: E P (T) = E P (0)mentioning

confidence: 49%

“…This band peak can be attributed to -FeSi 2 sample's originating and confirmed ever first time by PLD. The PL's at 0.84 eV ~0.89 eV and 0.77 eV~0.79 eV may be attributed to dislocation related lines [16]. Figure 4 shows the temperature dependence of the PL intensity of 20-hr-annealed sample.…”

Section: Methodsmentioning

confidence: 96%

Crystalline and the luminescence characteristics of β-FeSi<inf>2</inf> in photonics formed by pulsed laser deposition

Hossain

Mimura

Uekusa

2008

2008 International Conference on Electrical and Computer Engineering

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Compound semiconducting silicide -FeSi 2 has been formed on FZ -Si (111) substrates by means of pulsed laser deposition (PLD) method using ArF ( = 193 nm) excimer laser. In photoluminescence (PL) measurements at 8K detected by a Ge detector, the PL spectra of the samples annealed at 900 C for 1, 5, 8 and 20 hrs showed that the PL intensities of the A-and peak increased depending on annealing time in comparison with those of the as-deposited sample. The intrinsic PL intensity of the A-band peak from 20 hr annealed sample was investigated. The dependence of the PL excitation power density of the 20-hr-annealed sample also showed A-band peak at 0.808 eV that almost constant peak position. The temperature dependence PL intensity of the 20-hr-annealed sample in the ranges 15K~150K by an InGaAs detector showed the PL peak was at 0.808 eV. This peak confirmed the intrinsic PL peak of A-band of theFeSi 2 . The transmittance of the thin films was measured in the range 0-2500 nm. Moreover, it is calculated the refractive indices using the reflectance. We report an application ofFeSi 2 with crystalline and luminescence characteristics with a high refractive index in photonics.

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Nature of the band gap of polycrystalline β-FeSi2films

Cited by 123 publications

References 9 publications

Phase transformation in FeSi2 nanowires

Phase transformation in FeSi2 nanowires

Structure and electronic properties ofFeSi2

Crystalline and the luminescence characteristics of β-FeSi<inf>2</inf> in photonics formed by pulsed laser deposition

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Nature of the band gap of polycrystalline β-FeSi2films

Cited by 123 publications

References 9 publications

Phase transformation in FeSi2 nanowires

Phase transformation in FeSi2 nanowires

Structure and electronic properties ofFeSi2

Crystalline and the luminescence characteristics of &#x03B2;-FeSi<inf>2</inf> in photonics formed by pulsed laser deposition

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Crystalline and the luminescence characteristics of β-FeSi<inf>2</inf> in photonics formed by pulsed laser deposition