Nature of V-Shaped Defects in GaN

Voronenkov, V. V.; Bochkareva, N. I.; Gorbunov, R. I.; Latyshev, Philippe; Lelikov, Yu. S.; Rebane, Yu. T.; Tsyuk, A. I.; Zubrilov, A. S.; Shreter, Yu. G.

doi:10.7567/jjap.52.08je14

Cited by 30 publications

(17 citation statements)

References 13 publications

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“…GaN crystals 200-400 μm thick grown by the two stage hydride vaporphase epitaxy (HVPE) method at growth temperatures between 1000 and 1150°C on sapphire [16] were studied. The grown in dislocation density was ~10 6 cm -2 .…”

Section: Methodsmentioning

confidence: 99%

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

2015

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Section: Methodsmentioning

confidence: 99%

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

2015

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“…Taking into account the results of morphology investigation presented in this work and the literature, 13,15,37,38 a model for the growth of bulk HVPE-grown GaN is proposed: The growth process of bulk GaN using HVPE techniques is governed by the formation and subsequent overgrowth of the so-called V-type defects or pits on the film surface. The origin of pit formation could be any type of imperfection able to locally reduce the growth rate such as threading dislocations, cracks, substrate contamination, foreign particles landing on the growing film, etc.…”

Section: Ecs Journal Of Solid State Science and Technology 5 (5) P21mentioning

confidence: 99%

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Tiginyanu

Stevens‐Kalceff

Sarua

et al. 2016

ECS J. Solid State Sci. Technol.

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Self-organized 3D nanostructured architectures including quasi-ordered concentric hexagonal structures generated during the growth of single crystalline n-GaN substrates by hydride vapor phase epitaxy (HVPE) are reported. The study of as-grown samples by using Kelvin Probe Force Microscopy shows that the formation of self-organized architectures can be attributed to fine modulation of doping related to the spatial distribution of impurities. The specific features of nanostructured architectures involved have been brought to light by using electrochemical and photoelectrochemical etching techniques which are highly sensitive to local doping. The analysis of the results shows that the formation of self-organized spatial architectures in the process of HVPE is caused by the generation of V-pits and their subsequent overgrowth accompanied by the growth in variable direction. It is demonstrated for the first time that the electrical and luminescence properties of HVPE-grown GaN are spatially modulated throughout, including islands between overgrown V-pit regions. The dependence of doping upon growth direction is confirmed by the micro-cathodoluminescence characterization of HVPE-grown pencil-like microcrystals exposing various crystallographic planes along the tip. These results are indicative of new possibilities for defect engineering in gallium nitride and for three-dimensional spatial nanostructuring of this important electronic material by controlling the growth direction. Gallium Nitride (GaN), a wide-bandgap semiconductor compound (E g = 3.4 eV at 300 K), is considered nowadays the second most important semiconductor material after Si. Over the past decades it has played a major role in the development of modern solid-state lighting industry.1-3 An intensive investigation of this compound started in 1970's, but with minimal success in the development of real applications. In the absence of native bulk material, GaN epilayers were grown on foreign substrates and, as a result of the large lattice mismatch and difference in thermal expansion coefficients, the overgrown films contained a high concentration of threading dislocations. The fascinating point, however, is that even in the presence of very high concentrations of dislocations, sometimes exceeding 10 10 cm −2 , gallium nitride exhibits intense luminescence, a property that makes the compound unique in comparison with other III-V materials, such as GaAs, GaP and InP. This particular feature along with other material characteristics were of paramount importance for the development and subsequent commercialization of GaN-based blue light emitting diodes by the mid-1990s. 4 This significant optoelectronic success resulted in the Nobel Prize for Physics being awarded to Shuji Nakamura, Isamu Akasaki and Hiroshi Amano, in 2014. There is no doubt that lighting technologies based on GaN and related nitrides will continue their impactful evolution, particularly in view of the recent demonstration of electrically pumped inversionless polariton lasing at room temper...

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“…Диоды Шоттки изготавливались на основе слоев GaN n-типа проводимости, выращенных на сапфировых под-ложках с ориентацией ростовой поверхности (0001) ме-тодом газофазной хлорид-гидридной эпитаксии (HVPE) (диоды A и B) [13] Измерения статических вольт-амперных характери-стик диодов проведены с помощью Keithley 238, ем-костные измерения проведены на частоте 1 МГц с по-мощью CV анализатора Keithley 590. Измерения фото-люминесценции эпитаксиальных слоев n-GaN, а также объемных кристаллов GaN толщиной d = 200 мкм [13], выращенных методом HVPE, проводились при ком-натной температуре с помощью спектрометра Avantes.…”

Section: экспериментunclassified

“…Измерения фото-люминесценции эпитаксиальных слоев n-GaN, а также объемных кристаллов GaN толщиной d = 200 мкм [13], выращенных методом HVPE, проводились при ком-натной температуре с помощью спектрометра Avantes. Фотолюминесценция возбуждалась He−Cd-лазером на длине волны λ = 325 нм со стороны поверхности роста и детектировалась " на просвет" со стороны подложки.…”

Section: экспериментunclassified

Прыжковая проводимость и диэлектрическая релаксация в барьерах Шоттки на основе GaN

Bochkareva¹,

Voronenkov²,

Gorbunov³

et al. 2017

Физика И Техника Полупроводников

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Представлены результаты исследования зависимостей тока и емкости от прямого смещения диодов Шоттки Au/n-GaN, а также спектров подзонного оптического поглощения и дефектной фотолюминесценции объемных кристаллов и тонких слоев n-GaN. Показано, что туннелирование с участием дефектов является доминирующим механизмом транспорта при прямых смещениях контактов Шоттки на n-GaN. Зависимости тока и емкости от прямого смещения отражают энергетический спектр дефектов в запрещенной зоне n-GaN: рост с энергией плотности глубоких состояний, ответственных за желтую фотолюминесценцию в GaN, и резкий экспоненциальный хвост состояний с урбаховской энергией EU=50 мэВ вблизи края зоны проводимости. Уменьшение частоты перескоков электронов вблизи интерфейса Au/n-GaN приводит к широкому распределению локальных времен диэлектрической релаксации и изменению распределения электрического поля в области пространственного заряда при прямых смещениях. DOI: 10.21883/FTP.2017.09.44888.8528

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Nature of V-Shaped Defects in GaN

Cited by 30 publications

References 13 publications

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

On the luminescence of freshly introduced a-screw dislocations in low-resistance GaN

Self-Organized Three-Dimensional Nanostructured Architectures in Bulk GaN Generated by Spatial Modulation of Doping

Прыжковая проводимость и диэлектрическая релаксация в барьерах Шоттки на основе GaN

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