nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices

Plis, E.; Kim, H. S.; Rodriguez, J. B.; Bishop, G.; Sharma, Yashika; Khoshakhlagh, Arezou; Dawson, L. R.; Bundas, Jason; Cook, Robert E.; Burrows, Douglas; Dennis, R.B.; Patnaude, Kelly; Reisinger, A. R.; Sundaram, M.; Krishna, S.

doi:10.1117/12.780375

Cited by 6 publications

(7 citation statements)

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“…A small FPA (320 × 256 pixels) was fabricated using nBn technology, having comparable performance to single pixel devices in the MWIR regime. Responsivities of 1.5 A/W, detectivities of 6.4 × 10 11 cmHz 1/2 /W, and NETD of 24 mK were also achieved with nBn devices [163]. Recently, pBn have drawn interest for use in photodetectors, but very few devices have been successfully fabricated.…”

Section: Strained-layer Superlatticesmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Strained-layer Superlatticesmentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

230

110

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“…Thus, unlike a conventional photodiode processing, the size of the device is not defined by the etch dimensions but by the lateral diffusion length of minority carriers. 11 If the values of lateral diffusion length are larger than the distance between neighboring pixels in FPA ͑which is typically on the order of several microns͒, crosstalk between the FPA elements can be encountered. Presence of crosstalk in the FPA could lead to the degradation of image resolution.…”

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confidence: 99%

“…10 Previously, we have reported a two-step etch process that we utilized for the fabrication of nBn detectors. 11 Using the first isolation etch to the top of the barrier layer, the singlepixel detectors were defined. The second etch was performed to the middle of the bottom contact layer and far away from the isolation etch region.…”

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confidence: 99%

Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors

Plis

Kim

Bishop

et al. 2008

Applied Physics Letters

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We report on the investigation of lateral diffusion of minority carriers in nBn based InAs/GaSb strained layer superlattice photodetectors. Values of diffusion length of minority carriers were extracted from temperature dependent I-V measurements. The behavior of diffusion length as a function of applied bias, temperature, and composition of the barrier layer and the values ranging by two orders of magnitude from 77 to 250 K at the same value of applied bias were investigated. The obtained results suggest that at this point the lateral diffusion current could be the limiting factor of the MWIR nBn detector performance at low (<150 K) temperatures.

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“…There have been numbers of high performance photodetector architectures reported in the literature. These include p-i-n structures [3][4][5] and heterojunctions such as nBn [6,7], pBp [8], CBIRD [9], M-structure [10] and review of barrier detectors [11].…”

Section: Introductionmentioning

confidence: 99%

N-structure based on InAs/AlSb/GaSb superlattice photodetectors

Hoştut

Alyörük

Tansel

et al. 2015

Superlattices and Microstructures

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a b s t r a c tWe have studied the theoretical and experimental properties of InAs/AlSb/GaSb based type-II superlattice (T2SL) pin photodetector called N-structure. Electronic properties of the superlattice such as HH-LH splitting energies was investigated using first principles calculations taking into account InSb and AlAs as possible interface transition alloys between AlSb/InAs layers and individual layer thicknesses of GaSb and InAs. T2SL N-structure was optimized to operate as a MWIR detector based on these theoretical approaches tailoring the band gap and HH-LH splitting energies with InSb transition layers between InAs/AlSb interfaces. Experimental results show that AlSb layers in the structure act as carrier blocking barriers reducing the dark current. Dark current density and R 0 A product at 125 K were obtained as 1.8 Â 10 À6 A cm À2 and 800 O cm 2 at zero bias, respectively. The specific detectivity was measured as 3 Â 10 12 Jones with cut-off wavelengths of 4.3 lm at 79 K reaching to 2 Â 10 9 Jones and 4.5 lm at 255 K.

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nBn based infrared detectors using type-II InAs/(In,Ga)Sb superlattices

Cited by 6 publications

References 0 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors

N-structure based on InAs/AlSb/GaSb superlattice photodetectors

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