NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer

Jeon, Yong Woo; Ka, Dae Hyun; Yu, Chong Gun; Cho, Won-Ju; Islam, Mahfuzul; Park, Jong-Tae

doi:10.1016/j.microrel.2009.06.015

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…Also, σ affects the degradation of MOSFETs due to electrical stresses such as hot carrier injection and bias temperature instability. [12][13][14][15][16][17][18] Two electrical methods of estimating σ on the Si substrate of MOSFETs have been proposed; one uses a change in μ due to σ 2,19) and the other uses a change in the subthreshold current I d(sub) . 20,21) The method of using μ measures the difference Δμ in μ between a stress-free reference MOSFET and a stressed measurement MOSFET, and then uses the fact that Δρ=ρ ≈ −Δμ=μ, where ρ ∝ 1=μ is the resistivity, and estimates σ by dividing −Δμ=μ by the effective piezoresistive coefficient 22) in the direction of the channel.…”

Section: Introductionmentioning

confidence: 99%

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Seo

Kim

Son

et al. 2016

Jpn. J. Appl. Phys.

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A simple and accurate method of estimating the mechanical stress σ on the Si body of a MOSFET is proposed. This method measures the doping concentration of the body, N d, and the onset voltage V hl for the high-level injection of the drain–body junction, uses N d, the ideality factor η, and the Fermi potential ϕf ≈ V hl/2η to calculate the intrinsic carrier concentration n i of the Si body, and then uses the calculated n i to obtain the bandgap energy E g of the Si body. σ is estimated from E g using the deformation potential theory. The estimates of σ agree well with those obtained using previous methods. The proposed method requires one MOSFET, whereas the others require at least two MOSFETs, so the proposed method can give an absolute measurement of σ on the Si body of a MOSFET.

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Section: Introductionmentioning

confidence: 99%

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Seo

Kim

Son

et al. 2016

Jpn. J. Appl. Phys.

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show abstract

“…In recent years, negative bias temperature instability (NBTI) has become a critical challenge due to the continuous shrinking of gate oxide thicknesses. Several studies have indicated that processinduced strain results in more serious NBTI degradation [2]- [4]. This is because forming gas may increase the number of Si-H bonds and induce nitrogen incorporation, both of which aggravate NBTI [2], [5], [6].…”

Section: Impact Of Mechanical Strain On Gifbe In Pd Soi P-mosfets As Indicated From Nbti Degradation I Introductionmentioning

confidence: 99%

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

Chang

Dai

et al. 2012

IEEE Electron Device Lett.

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This letter investigates the impact of mechanical strain on gate-induced floating-body effect in partially depleted silicon-on-insulator p-channel metal-oxide-semiconductor fieldeffect transistors. The strained FB device has less NBTI degradation than unstrained devices. This behavior can be attributed to the fact that more electron accumulation induced by strain effect reduces the electric oxide field significantly during NBTI stress. Analysis of the body current (I B ) under source/drain grounded and floating operation indicates an increase in the anode electron injection and electron tunneling from conduction band which occur at the partial n + poly-Si gate and Si substrate, respectively. This phenomenon can be attributed to the bandgap narrowing which has been induced by the strain effect. Index Terms-Gate-induced floating-body effect (GIFBE), negative bias temperature instability (NBTI), silicon-on-insulator (SOI) MOSFETs, strained silicon.

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Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

Kim

Roh

Kwon

et al. 2019

Microelectronics Reliability

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NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer

Cited by 5 publications

References 11 publications

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Method of estimating mechanical stress on Si body of MOSFET using drain–body junction current

Impact of Mechanical Strain on GIFBE in PD SOI p-MOSFETs as Indicated From NBTI Degradation

Channel-length dependence of mechanical stress effect by hybrid shallow trench isolation on NBTI degradation of HfSiON/SiO2 p-channel MOSFETs with strained Si/SiGe channel

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