NBTI and irradiation related degradation mechanisms in power VDMOS transistors

Stojadinović, N.; Djorić-Veljković, S.; Davidović, V.; Golubović, S.; Stanković, S.; Prijić, Aneta; Prijić, Z.; Manić, I.; Danković, Danijel

doi:10.1016/j.microrel.2018.07.138

Cited by 13 publications

(3 citation statements)

References 38 publications

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“…It is illustrated that the interface trap density N it raises obviously along with radiation dose at an approximate rate of 6.58 × 10 9 cm −2 per 100 krad(Si). The value of interface trap density in our study is slightly smaller than that of Bonaldo's work [27], and higher than the value of N. Stojadinović's research [34]. This may be caused by the different tested method and manufacturing process.…”

Section: Resultscontrasting

confidence: 81%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO 2 back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current current-voltage technique. When transistors are subjected to radiation, DCIV bulk current increases. The calculated results suggest that the interface trap density increases and its equivalent energy level is far away from the midgap with irradiation dose increasing, which can be explained by the energy distribution of interface traps. The interface trap energy density D IT (E IT ) as a function of the energy level E IT has been obtained by the least square optimization and shows the typical ''U-shape'' distribution. In detail, the rising humps at equivalent energy level in D IT (E IT ) curves are due to Si-H bonds that are broken down after irradiation, which corresponds to the increasing trap density. Moreover, it is found that the energy level of interface traps is redistributed after irradiation. The peak of humps in D IT (E IT ) curves occurs at the farther energy level with the increase of dose, which is similar to the equivalent energy level. It might arise from the shallow energy level of interface traps induced by radiation.INDEX TERMS SOI, interface traps, radiation, energy distribution.

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Section: Resultscontrasting

confidence: 81%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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“…Among the others, in Refs. [17][18][19], the effects induced by previous irradiation and the total dose received strongly affect the subsequent stresses. Specifically, in the case of low-dose irradiation, following stress caused by working in specific applications, this appears to result in device degradation in the future.…”

Section: Introductionmentioning

confidence: 99%

Study of Breakdown Voltage Stability of Gas-Filled Surge Arresters in the Presence of Gamma Radiation

2022

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The results presented in this article relate to the study of the impact of gamma radiation on the breakdown voltage of gas-filled surge arrester manufactured by CITEL, Littelfuse and EPCOS at an operating voltage of 230 V. Radium was considered as a source of gamma radiation in this research. The stability of breakdown voltage as well as the reliability of gas-filled surge arresters of different manufacturers were investigated using different statistical methods. This gas component operation was based on processes that lead to electrical breakdown and discharge in gas. The breakdown voltage has a stochastic nature, and it is a subject of certain distribution. One thousand voltage measurements of breakdown voltage were carried out for each value of the voltage increase rate, from 1 V/s up to 10 V/s, with and without the presence of additional gamma radiation. The detailed statistical analysis of the obtained experimental data was performed for both cases for all three GFSA types. Moreover, the cumulative distribution functions of breakdown voltage were presented with the applied Weibull distribution fit. The coefficient of correlation as well as Pearson χ2 test showed the strength of the relationship between the experimental distribution functions and the Weibull distribution fits. The values of the Weibull distribution coefficients for all voltage increase rates and for all components were also analyzed with and without gamma radiation.

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“…This leads to an increase in the overall circuit cost, complexity, and problems in the electronics, such as negative bias temperature instability, hot carrier injection, etc. [11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Series RLC Resonant Circuit Used as Frequency Multiplier

et al. 2022

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Currently, the design of resonant power converters has only been developed while operating in the steady state, while the design operating in the transient stage has not been considered nor reported. This paper is interested in testing the performance of the resonant circuits operating in the transient stage and finding applications where benefits can be obtained from this form of operation. One application in which it is possible to obtain benefits from designing resonant circuits in the transient state is in the area of frequency multiplication. Usually, to achieve frequency multiplication, it is necessary to resort to complex methods and special devices that increase the complexity of the design and the total cost of the circuit. This paper evaluates the performance of a series RLC resonant circuit operating in the transient stage and with an underdamped response acting as a frequency multiplier, where the oscillation frequency of the current in the resonant tank is “n” number of times the switching frequency of the square voltage source at the input with a duty cycle of D = 50%. To validate the analysis, a circuit was designed to deliver an output power of 30 watts to a resistive load, where the switching frequency of the square voltage source at the input was 500 kHz. Since a multiplier value “n” equal to fifteen was chosen, the current in the resonant tank reached an oscillation frequency of 7.5 MHz. The design methodology was validated by simulations in SPICE, complying with the established design parameters.

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NBTI and irradiation related degradation mechanisms in power VDMOS transistors

Cited by 13 publications

References 38 publications

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Study of Breakdown Voltage Stability of Gas-Filled Surge Arresters in the Presence of Gamma Radiation

Series RLC Resonant Circuit Used as Frequency Multiplier

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