2009 10th International Symposium on Quality of Electronic Design 2009
DOI: 10.1109/isqed.2009.4810263
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NBTI-aware statistical circuit delay assessment

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Cited by 14 publications
(6 citation statements)
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“…As can be seen in (8) and (11) , the mean of the average difference Z n remains unchanged when compared with each X i . On the other hand, the variance of Z n is dependent on √ n. A similar derivation is carried out to estimate the resultant mean and variance for the distribution at time t, g t (f FD ).…”
Section: A Spread Reduction By Averaging Methodsmentioning
confidence: 85%
See 1 more Smart Citation
“…As can be seen in (8) and (11) , the mean of the average difference Z n remains unchanged when compared with each X i . On the other hand, the variance of Z n is dependent on √ n. A similar derivation is carried out to estimate the resultant mean and variance for the distribution at time t, g t (f FD ).…”
Section: A Spread Reduction By Averaging Methodsmentioning
confidence: 85%
“…Undeniably, NBTI is well known to researchers and manufacturers alike as a dominant ageing mechanism in all different configurations of integrated circuits (ICs). For instance, in the post-IC manufacturing period of 7 to 10 years, accelerated ageing due to NBTI has been reported by [5] and [8] as degradation in threshold voltage up to 50 mV. Speed degradation (of 20%) follows these shifts in threshold voltage and, therefore, shows a strong correlation between NBTI prompted delay and threshold voltage shift.…”
mentioning
confidence: 99%
“…They differ in the type of reliability effects considered and the type of circuits studied. For digital circuits, NBTI-aware statistical timing analysis considering process variations are proposed in (Vaidyanathan, Oates, Xie & Wang, 2009), ), (Wang et al, 2008) and (Lu et al, 2009). Authors in (Vaidyanathan, Oates, Xie & Wang, 2009) build up gate-level delay fall-out model by propagating the device parameter fall-out model due to NBTI and process variations into the gate delay model.…”
Section: State Of the Artmentioning
confidence: 99%
“…The delay models are commonly based on the Sakurai's a power law MOSFET model [1], to express the transistor current, which does not take into account the prevalent effects characteristic for present nanometer technologies. Moreover, most papers do not model the joint effect of multiple aging mechanisms [12][13][14][15], and very few consider the aged signal slope [2] as wearout monitor. In [3], the authors propose a delay model considering both Time Dependent Dielectric Breakdown (TDDB) and Negative Bias Temperature Instability (NBTI).…”
Section: Introductionmentioning
confidence: 99%