NBTI from the perspective of defect states with widely distributed time scales

Kaczer, B.; Grasser, T.; Martín-Martínez, J.; Simoen, Eddy; Aoulaiche, M.; Roussel, Ph.; Groeseneken, G.

doi:10.1109/irps.2009.5173224

Cited by 98 publications

(43 citation statements)

References 17 publications

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“…In other words, the 1/f noise PSD can be considered as an early indicator of the NBTI behavior of the pMOSFETs studied. In fact, it is by now well-established that there exists a strong correlation between 1/f noise and the NBTI relaxation transients, [18][19][20] since both are associated with pre-existing traps in the gate stack. The main difference is that NBTI probes a wider part (in depth and in energy) of the oxide trap density of states.…”

Section: Discussionmentioning

confidence: 99%

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

Simoen

Ritzenthaler

Cho

et al. 2016

ECS J. Solid State Sci. Technol.

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The impact of the implementation of a high-κ/metal-gate (HKMG) stack on the oxide integrity of input-output (I/O) pMOSFETs for DRAM periphery applications is investigated by means of low-frequency (LF) noise spectroscopy. It is shown that the predominant 1/f noise is governed by number fluctuations, irrespective of the details of the gate stack. However, the trap density in the 5 nm SiO 2 gate oxide, derived from the noise power spectral density is significantly increased by the application of the HKMG and/or Al 2 O 3 cap and the subsequent diffusion anneal at 900 • C.

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Section: Discussionmentioning

confidence: 99%

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

Simoen

Ritzenthaler

Cho

et al. 2016

ECS J. Solid State Sci. Technol.

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“…The very same defects were indicated to also cause flicker (1/f ) noise [8][9][10], which is (at least partly) attributed to a superposition of a multitude of RTS signatures in large-area devices. A study of the response of small scale devices to NBT stress led to the development of the time dependent defect spectroscopy (TDDS), which made a detailed investigation of the charging and discharging of single defects possible [11].…”

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confidence: 99%

An advanced description of oxide traps in MOS transistors and its relation to DFT

Schanovsky¹,

Gös²

2010

J Comput Electron

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Recently, an advanced model for defects in the insulating regions of semiconductor devices has been suggested, which can explain the removable component of the negative bias temperature instability (NBTI) and recoverable random telegraph/flicker noise. We give a brief introduction to the atomic scale physics behind the model and show how model parameters can be extracted from density functional theory (DFT) calculations. The central link between DFT calculations and device simulation is the carrier energy dependent part of the capture cross section, the line shape function. Calculations of the line shape functions of model defect structures using a simple harmonic approximation are presented. The calculations show a considerable shift in the oscillator frequency upon charge state transitions for the defects investigated.

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“…However, when the stress is removed, α is decreased to its normal value. This implies that the traps responsible for RTS are also responsible for the NBTI recovery as reported in [21,22]. Note that Fig.…”

Section: Theoretical Analysismentioning

confidence: 60%

“…Meanwhile, RTS has been explained to be due to hole trapping/detrapping, and therefore should be related to NBTI. In fact, Kaczer et al pointed out a broad similarity between the relaxation process of NBTI and 1/f noise [21]. Furthermore, Grasser et al succeeded in reproducing the time constants of RTS by using a recovery model of NBTI [22], which indicates that care must be taken to properly account for these two phenomena for worst-case SRAM design margins.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the relationship between random telegraph signal and negative bias temperature instability

Tsukamoto

Toh

Shin

et al. 2010

2010 IEEE International Reliability Physics Symposium

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Abstract-Random telegraph signal (RTS) is shown to be an intrinsic component of the shift in MOSFET threshold voltage (V th ) due to bias temperature instability (BTI). This is done by starting from a well-known model for negative BTI (NBTI), to derive the formula for RTS-induced V th shift. Based on this analysis, RTS simply contributes an offset in NBTI degradation, with an acceleration factor that is dependent on the gate voltage and temperature. This is verified by 3-dimensional (3-D) device simulations and measurements of 45nm-node bulk-Si PMOS transistors. It has an important implication for design of robust SRAM arrays in the future: design margin for RTS should not be simply added, because it is already partially accounted for within the design margin for NBTI degradation.

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NBTI from the perspective of defect states with widely distributed time scales

Cited by 98 publications

References 17 publications

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

Low-Frequency Noise Assessment of the Oxide Trap Density in Thick-Oxide Input-Output Transistors for DRAM Applications

An advanced description of oxide traps in MOS transistors and its relation to DFT

Analysis of the relationship between random telegraph signal and negative bias temperature instability

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