NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

Yuan, J.S.; Yeh, Wen Kuan; Chen, Shuyu; Hsu, Chia Wei

doi:10.1016/j.microrel.2010.12.015

Cited by 9 publications

(3 citation statements)

References 21 publications

(26 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The wafer was heat up to a high temperature within a very short duration and also allows cooling down quickly by fast heat conduction. Furthermore, the process flow incorporates with advanced stress engineering with epi-SiGe pockets; stress memorization, silicidation, and dual stress liner (DSL) to improve the on-state drain-current drive capability as evidenced by the experimental data in [14].…”

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS

Wahab

Soin

Hatta

2014

Microelectronics Reliability

View full text Add to dashboard Cite

Section: Contents Lists Available At Sciencedirectmentioning

confidence: 99%

Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS

Wahab

Soin

Hatta

2014

Microelectronics Reliability

View full text Add to dashboard Cite

“…Taguchi methods were employed in optimizing the Cu wire bonding process. The production yield increased from 98.5% to 99.3% and brought approximately USD 0.7 million in savings [11]. The interconnections of the TS flip-chip assemblies were more reliable than those of anisotropic adhesive assemblies prepared on the same bonder [12].…”

Section: Introductionmentioning

confidence: 99%

Thermal Analysis of Heating System in Thermosonic Bonding Process

Zhang

Fang

et al. 2013

AMM

View full text Add to dashboard Cite

A constant temperature range of the heating system plays an important role in the thermosonic bonding process. Heating block will provide enough heat for the heating system. In the paper, the thermal model of heating block and heating system were calculated by finite element method, and then some important conclusions were obtained. The change of temperature and thermal stress of block with the reference value of x and y was obtained. And an optimal structure of block for right temperature was built. The temperature distribution, thermal displacement and thermal stress distribution of the heating block and heating system were disclosed. The relevant change trends of temperature and thermal stress under the different load of temperature were investigated. These results can help improve the reliability of the heating system used in the thermosonic bonding process.

show abstract

“…[6][7][8][9][10] Negativebias temperature instability (NBTI) is considered to be a major reliability issue for scaled CMOS technologies due to the increased oxide electric field (E ox ) caused by scaled electrical oxide thickness (EOT). Many investigations on the NBTI of SiGe pMOSFETs have focused on degradation characteristics, [11][12][13][14] but under real operating conditions, the devices would be subjected to repeated stress and recovery phases. Thus, the in-depth analysis of the recovery characteristics of SiGe pMOSFETs could provide an accurate and deeper understanding of their NBTI reliability.…”

Section: Introductionmentioning

confidence: 99%

Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress

Choi

Sohn

Sagong

et al. 2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This paper describes the degradation and recovery characteristics of SiGe pMOSFETs with a high-k/metal gate stack under negative-bias temperature instability (NBTI) stress. The threshold voltage instability (ΔV th) of SiGe pMOSFETs shows an increased percentage of recovery (R) as well as lower degradation than those of control Si pMOSFETs. It is found that the recovery characteristics of SiGe and Si pMOSFETs have similar dependencies on various stress conditions, and the increased R of SiGe pMOSFETs is mainly attributed to their lower degradation characteristic. Under real operating conditions, most of the ΔV th caused by hole trapping would be rapidly recovered through a fast recovery process, and newly-generated interface traps during the stress would determine the degradation level of V th. The SiGe pMOSFETs show lower stress-induced interface traps; thus, they would display more reliable NBTI characteristics than Si pMOSFETs under real operating conditions.

show abstract

NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

Cited by 9 publications

References 21 publications

Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS

Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS

Thermal Analysis of Heating System in Thermosonic Bonding Process

Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress

Contact Info

Product

Resources

About