Photochemical reactions related to the Ge lone-pair center ͑GLPC͒ that are induced by KrF excimer laser photons in H 2 -loaded Ge-doped SiO 2 glass have been investigated. Without the H 2 loading, the Ge electron center ͑GEC͒ and the positively charged GLPC were induced by the laser irradiation. In the H 2 -loaded sample, the GEC, the Ge EЈ center, and the germyl radical ͑GR͒ were induced by the irradiation, while the positively charged GLPC was not observed after the irradiation. If the H 2 -loaded sample was thermally annealed after the photon irradiation, the concentration of the photo-induced GEC decreased monotonically with an increase in the annealing temperature. On the other hand, the concentration of the GR increased up to the annealing temperature of 160°C, and it decreased at higher temperatures. Without the pre-irradiation, the induction of the GR was not observed even in the H 2 -loaded sample. From these results, it is concluded that the positively charged GLPC is terminated with a hydrogen atom in the H 2 -loaded sample and then becomes the GR by trapping an electron thermally released from the GEC. ͓S0163-1829͑99͒05631-3͔ PHYSICAL REVIEW B 15 AUGUST 1999-I VOLUME 60, NUMBER 7 PRB 60 0163-1829/99/60͑7͒/4682͑6͒/$15.00 4682