Ultrasonic time‐of‐flight (TOF) is investigated as a predictor of density variation across reaction‐sintered silicon carbide (SiC) ceramics. The importance of this research is heightened by the fact that the reaction‐sintered SiC ceramic tiles being investigated are manufactured using the reaction sintering process that involves the infusion of liquid silicon into a porous ceramic preform. This can potentially lead to the formation of islands of free silicon, small closed areas of un‐sintered silicon material as well as conventional porosity. All these defects can result in local variations of density which cannot be detected by conventional bulk density measurement techniques. To study the microstructural differences, the porosity dependence of ultrasonic TOF of the reflected signals was investigated to establish a correlation between the velocity and density across the ceramic tile that aids in characterizing the material. The data suggest that for these ceramic tiles, TOF C‐scan mapping surfs as a much better indicator of sample homogeneity than the amplitude of the back wall echo. At the current time, ceramic tiles are inspected offline and this takes time and effort and is very expensive. In particular, this study contains the procedure followed to establish a quantitative method to quantify density variation across selected ceramic tile.