Near-band gap luminescence at room temperature from dislocations in silicon

Stowe, David; Galloway, S.A.; Senkader, S.; Mallik, Kanad; Falster, R.; Wilshaw, Peter R.

doi:10.1016/j.physb.2003.09.155

Cited by 19 publications

(15 citation statements)

References 8 publications

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“…This comes on top of earlier arguments [4], [17] that the carrier confinement mechanism proposed in those papers is not likely. Kveder also reported a decrease in BB luminescence in the presence of a high density of dislocation loops [8].…”

Section: Diode Luminescence At Room Temperaturesupporting

confidence: 68%

Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

Hoang

Holleman

LeMinh

et al. 2007

IEEE Trans. Electron Devices

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Abstract-The infrared light emission of forward-biased silicon diodes is studied. Through ion implantation and anneal, dislocation loops were created near the diode junction. These loops suppress the light emission at the band-to-band peak around 1.1 µm. The so-called D1 line at 1.5 µm is strongly enhanced by these dislocation loops. We report a full study of photoluminescence and electroluminescence of these diodes. The results lead to new insights for the manufacturing approach of practical infrared light sources in integrated circuits.

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Section: Diode Luminescence At Room Temperaturesupporting

confidence: 68%

Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

Hoang

Holleman

LeMinh

et al. 2007

IEEE Trans. Electron Devices

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“…The experimental approach where the formation of extended defects is controlled by thermal treatments alone is therefore not sufficient to study a causal relation between electroluminescence and the dislocation loops. Stowe et al [3] report on experiments where boron or silicon is implanted to form defects in silicon. These experiments show that light emission occurs in damaged silicon samples even when no pn junction is present.…”

Section: )mentioning

confidence: 99%

“…Ng et al attribute the high efficiency of light emission to the presence of dislocation loops near the p-n junction; it is argued that these loops spatially confine carriers through a modification of the band structure, thus reducing the probability that carriers are recombined through a non-radiative process at a point defect in silicon. This explanation of the observed relatively strong light emission has led to debate in literature and may well be invalid [3,4,8]. Moreover, in retrospect no direct evidence has been brought forward that the dislocation loops are in one way or another responsible for the light emission enhancement.…”

Section: Introductionmentioning

confidence: 99%

“…Several techniques are being pursued to produce an efficient light emitter in silicon technology, preferably compatible to standard IC technology. One of these approaches is the fabrication of diodes with a dislocation loop region near the junction by ion implantation [1][2][3][4][5][6]. It was shown by Ng et al [1] that the internal quantum efficiency of such diodes can reach 10 -3 at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…

AbstractRecently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature [1][2][3][4][5][6]. In this paper we report our results on light emission of silicon p + n diodes with various defect engineering approaches.

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mentioning

confidence: 96%

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The effect of dislocation loops on the light emission of silicon LEDs

Hoang

LeMinh

Holleman

et al.

Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.

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Recently, different and apparently contradicting results were published regarding the influence of crystal defects on the light emission efficiency of silicon LEDs at room temperature [1][2][3][4][5][6]. In this paper we report our results on light emission of silicon p + n diodes with various defect engineering approaches. The p + region was formed either by ion implantation or by diffusion; and optionally, additional lattice damage was created by silicon ion implantation. The experiments clearly indicate that lattice defects have a detrimental effect on light emission, contrary to the results published in recent years.

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The role of dislocations in producing efficient near‐bandgap luminescence from silicon

Fraser¹,

Stowe

Galloway³

et al. 2007

Phys. Status Solidi (c)

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Cathodoluminescence is used to investigate the phenomenon of relatively efficient band-to-band luminescence from silicon specimens processed to contain near surface dislocations. Dislocations are produced either by ion implantation and subsequent high-temperature annealing or by mechanical abrasion of specimens having a wide range of doping concentrations. It is found that the luminescence is not directly related to the presence of dislocations and, in some cases, can be enhanced by low temperature annealing. This luminescence behaviour is explained by the effect of competing non-radiative recombination due to impurity deep levels and Auger recombination. The enhancement observed in some specimens is due to gettering of the deep level impurities.

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Near-band gap luminescence at room temperature from dislocations in silicon

Cited by 19 publications

References 8 publications

Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

The effect of dislocation loops on the light emission of silicon LEDs

The role of dislocations in producing efficient near‐bandgap luminescence from silicon

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