Near-field optical microscopy of AlGaInP laser diode emissions and comparison with far-field observation

Tomioka, Akihiro; Fujimoto, Atsushi; Kinoshita, Shinji; Miura, Takaaki; Sakashita, Akira; Susaki, W.

doi:10.1016/j.colsurfa.2007.04.133

Cited by 8 publications

(6 citation statements)

References 11 publications

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“…This shift may be due to the heating of the LD chip surface by a light scattering at the probe tip: a photodiode placed near the LD chip detected a strong light scattered by the aperture. The origin of the scattered light was not the propagating laser far-field, but the near-field augmented by the conductive subwavelength aperture [4], because the scattering intensity was changed by a small position difference of the aperture as little as 160 nm, and because this scattered light intensity was similar dependence on the aperture position as the NSOM detected field. This second observation suggests that the conventional NSOM detected field picked up by an aperture probe is the part of a near-field at the aperture that was scattered into a propagating mode inside a probe fiber.…”

Section: Resultsmentioning

confidence: 99%

Near-Field Modulation of AlGaInP Laser Diode Emissions by an Aperture Probe of Near-Field Optical Microscope

Kamiyama

Tomioka

Anzai

et al. 2010

AIP Conference Proceedings

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Abstract. In situ emission profiles of AlGaInP multiple quantum well laser diodes (LD's) observed by a near-field scanning optical microscope (NSOM) aperture probe shows a single broad elliptic profile similar to a far-field observation, whereas the local emission spectrum was different depending where the aperture probe was placed within the emission profile. This observation suggests the existence of a near-field coupling between the aperture and the LD cavity, which might modulate the lasing wavelength among the longitudinal multimodes determined by the LD cavity length.

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Section: Resultsmentioning

confidence: 99%

Near-Field Modulation of AlGaInP Laser Diode Emissions by an Aperture Probe of Near-Field Optical Microscope

Kamiyama

Tomioka

Anzai

et al. 2010

AIP Conference Proceedings

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“…23,24 However, the near-field component of the EL signal will be very weak as we examined in this study and apertured FP with improved near-field EL collection efficiency is required to characterize the individual nanodiodes. Local EL near-field collection by a conductive FP with subwavelength optical aperture can reach a spatial resolution of aperture size and thus can be a solution.…”

Section: Perspectives On Improving Stm-el Spatial Resolutionsmentioning

confidence: 99%

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

Watanabe

Nakamura

Kuboya

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inScanning tunneling microscope-cathodoluminescence measurement of the GaAs/AlGaAs heterostructure J.Local characterization of electroluminescence (EL) from working light-emitting devices is a key to developing and improving their EL properties. The authors developed a scanning tunneling microscope-(STM-) EL technique based on conductive optical fiber probe STM with homemade bipolar sample holder and we demonstrated spatially resolved STM-EL nanospectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure (110) cross-sections. The lateral spatial resolution of the STM-EL measurement was evaluated to be about 0.9 lm, whose origin was attributed to far-field EL collection by the tapered core of the optical fiber probe. This lateral spatial resolution agrees with the estimated spatial resolution of 1.1 lm in lateral and 1.2 lm in depth.

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“…The spatial profile similarity of the two suggests that the far-field laser emission scattered by the probe tip was negligible to the near-field scattering, and hence, that the intensity of the near-field was much more than that of the far-field laser emission at the proximity of the LD chip surface. The near-field may also be augmented by the conductive subwavelength aperture of the probe [9] (field enhancement due to a steep curvature of the tip).…”

Section: A Scattered Near-field At the Nsom Probe Tipmentioning

confidence: 99%

An Aperture Probe of Near-Field Optical Microscope: Near-Field Tool to Modulate the Laser Diode Emissions

Tomioka

Anzai

Iwamoto

et al. 2009

e-J. Surf. Sci. Nanotechnol.

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In situ emission profiles of AlGaInP multiple quantum well laser diodes (LD's) observed by a near-field scanning optical microscope aperture probe shows a single broad elliptic profile similar to a far-field observation, whereas the local emission spectrum was different depending where the aperture probe was placed within the emission profile. This observation suggests the existence of a near-field coupling between the aperture and the LD cavity, which modulates the lasing wavelength among the longitudinal multimodes determined by the LD cavity length.

show abstract

Near-field optical microscopy of AlGaInP laser diode emissions and comparison with far-field observation

Cited by 8 publications

References 11 publications

Near-Field Modulation of AlGaInP Laser Diode Emissions by an Aperture Probe of Near-Field Optical Microscope

Near-Field Modulation of AlGaInP Laser Diode Emissions by an Aperture Probe of Near-Field Optical Microscope

Scanning tunneling microscope-based local electroluminescence spectroscopy of p-AlGaAs/i-GaAs/n-AlGaAs double heterostructure

An Aperture Probe of Near-Field Optical Microscope: Near-Field Tool to Modulate the Laser Diode Emissions

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