Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

Karanikolas, Vasilios; Marocico, Cristian A.; Eastham, P. R.; Bradley, A. Louise

doi:10.1103/physrevb.94.195418

Cited by 35 publications

(31 citation statements)

References 54 publications

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“…It has been proposed that dielectric screening can cause the NRET efficiency to decrease as the number of layers of MoS2 increases [2,3]. Similar effects have been also been predicted for superlattices of monolayer MoS2, due modification of the mode distribution as the number of layers increases [4].…”

Section: Resultsmentioning

confidence: 54%

Enhancing the electrical properties of MoS<inf>2</inf> through nonradiative energy transfer

Gough

O’Brien

McEvoy

et al. 2017

2017 11th International Congress on Engineered Materials Platforms for Novel Wave Phenomena (Metamaterials)

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In this study highly efficient nonradiative energy transfer from semiconductor quantum dots to monolayer MoS2 with an efficiency of ~99% is demonstrated. Although the energy transfer efficiency is close to unity, there is little enhancement of the MoS2 photoluminescence intensity. MoS2 samples of varying layer thickness were electrically contacted and the optoelectronic performance of the devices was studied before and after adding quantum dots in a sensitizing layer. We find photocurrent enhancements as large ~12 fold for monolayer MoS2 devices and enhancements as high as ~4 fold for few layer devices with no change in the photocurrent with the MoS2 devices of bulk-like thicknesses after adding the QDs.

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Section: Resultsmentioning

confidence: 54%

Enhancing the electrical properties of MoS<inf>2</inf> through nonradiative energy transfer

Gough

O’Brien

McEvoy

et al. 2017

2017 11th International Congress on Engineered Materials Platforms for Novel Wave Phenomena (Metamaterials)

View full text Add to dashboard Cite

show abstract

“…It features a bandgap in the visible, strong excitonic resonances, and high oscillator strengths. MoS 2 also supports exciton-polaritons, and it has been predicted theoretically that it can modify the spontaneous decay rates for nearby quantum emitters [26][27][28][29]. Experiments with coupled quantum emitters (quantum dots and molecules) and MoS 2 layers have also appeared in the literature [30][31][32][33].…”

Section: Introductionmentioning

confidence: 91%

“…The Purcell factors at z = R were calculated from first-order perturbation theory, with the application of Fermi's golden rule, summing over all final states, and calculation of the relevant electromagnetic Green's tensor at the position of the QD, with Green's tensor representing the response of the geometry under consideration to a point-like excitation [34]. For details of the calculation, we refer the reader to [28]:…”

Section: Density Matrix Equations For the Qd Near A Mos 2 Monolayer Umentioning

confidence: 99%

“…Experiments with coupled quantum emitters (quantum dots and molecules) and MoS 2 layers have also appeared in the literature [30][31][32][33]. The spontaneous decay rates for a quantum emitter near a MoS 2 layer can be anisotropic for electric dipole moments parallel or perpendicular to the monolayer [28], which makes the MoS 2 layer a potential candidate for accelerating the spin initialization process in a nearby QD in the Voigt geometry. Here, we first compute the Purcell factors for the QD near a MoS 2 monolayer.…”

Section: Introductionmentioning

confidence: 98%

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Rapid Optical Spin Initialization of a Quantum Dot in the Voigt Geometry Coupled to a Two-Dimensional Semiconductor

et al. 2020

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We study the interaction of a quantum dot in the Voigt configuration with a laser pulse and particularly analyze the potential for rapid spin initialization by putting the quantum dot near a molybdenum disulfide (MoS 2 ) monolayer. The MoS 2 monolayer influences the spontaneous decay rates of the quantum dot, leading to anisotropically enhanced decay rates, for the quantum dot’s electric dipole moments parallel and perpendicular to the layer. By solving the relevant density matrix equations, we find that high spin initialization fidelity is obtained at short times. The fidelity is significantly higher than when the quantum dot is in free-space vacuum. We examine two different cases of the interaction of the quantum dot with the applied optical field. First, we use a continuous wave laser field and determine for various quantum dot—MoS 2 layer distances the field strength that leads to acceptable fidelity levels. The effect of the quality of the MoS 2 material on the fidelity of spin initialization is also examined. We also study the interaction of the quantum dot with a laser pulse and apply numerical optimal control to obtain the time-dependent field strength, which leads to maximum final fidelity for short time intervals. The latter approach gives beneficial results in comparison to the continuous wave field excitation.

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“…This can be intuitively understood based on the fact that a hyperbolic 2D system is metallic in one direction and insulating in the other. In the lossless limit, the metallic direction can support the strongly confined TM plasmon mode whereas the insulating direction supports only the weakly confined TE plasmon [51,52]. The large contrast between the respective mode volumes results in a strong anisotropy in the intravalley spontaneous emission rates in the two directions, leading to maximum valley coherence reaching close to the theoretical upper limit in the hyperbolic regions.…”

mentioning

confidence: 92%

Engineering valley quantum interference in anisotropic van der Waals heterostructures

et al. 2020

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In this paper, we present a novel route to manipulate the spontaneous valley coherence in two-dimensional valleytronic materials interfaced with other layered materials hosting anisotropic polaritonic modes. We propose two implementations-one, using anisotropic plasmons in phosphorene and another with hyperbolic phonon polaritons in α-MoO 3. In particular, we show the electrostatic tunability of the spontaneous valley coherence achieving robust valley coherence values in the near-infrared wavelengths at room temperature. The tunability of this valley coherence shown in these heterostructures would enable the realization of active valleytronic quantum circuitry.

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Near-field relaxation of a quantum emitter to two-dimensional semiconductors: Surface dissipation and exciton polaritons

Cited by 35 publications

References 54 publications

Enhancing the electrical properties of MoS<inf>2</inf> through nonradiative energy transfer

Enhancing the electrical properties of MoS<inf>2</inf> through nonradiative energy transfer

Rapid Optical Spin Initialization of a Quantum Dot in the Voigt Geometry Coupled to a Two-Dimensional Semiconductor

Engineering valley quantum interference in anisotropic van der Waals heterostructures

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