Backward/near-forward Raman scattering and ab initio Raman/phonon calculations are combined, together with x-ray diffraction and ellipsometry measurements to further inform the debate on the compact phonon behavior of the II–VI Cd1−xZnxTe alloy. The compacity favors the coupling of polar optic modes in both the transverse and longitudinal symmetries via the related [Formula: see text] long-wave electric fields. The [Formula: see text]-coupling achieves maximum in the Zn-dilute limit, which enhances the (upper) ZnTe-like (impurity) mode at the expense of the (lower) CdTe-like (matrix-like) one, leaving the impression of a unique {Cd-Te,Zn−Te}-mixed longitudinal optic (LO) phonon across most of the composition domain. However, the purely mechanical (non-polar) transverse optic (PM-TO) phonons, that hardly couple, reveal an underlying three-mode {1 × (Cd-Te),2 × (Zn-Te)} fine structure that distinguishes between Zn–Te vibrations in Zn- and Cd-like environments up to second neighbors. Further refinement arises by exploring the phonon–polariton (i.e., polar-TO) regime at large Zn content. On reducing the scattering angle, the [Formula: see text]-coupling develops into a sequential softening of phonon–polaritons from ZnTe- down to CdTe-like ones, which transiently unveils a bimodal pattern behind the Cd–Te signal. Altogether, this results in a (rare) canonical four-mode {2 × (Cd-Te),2 × (Zn-Te)} percolation pattern for Cd1−xZnxTe, i.e., a close II–VI replica of the twin III−V In1−xGaxAs one—yet differing by two apparent LO modes and a sensitivity of bond vibrations limited to first-neighbors. Retrospectively, the difference in sensitivity of bond vibrations to the local environment between In1−xGaxAs (limited to first neighbors) and Cd1−xZnxTe (extending up to second neighbors) emerges as a rule throughout common (covalent) III–V and (ionic) II–VI semiconductor alloys.