Near-infrared emission from modified zinc oxide hybrid nanostructures

Near-infrared emission material, C e 3 + , E r 3 + co-doped C a 1.5 Y 1.5 A l 3.5 S i 1.5 O 12 has been synthesized via a high-temperature solid-state reaction method. The luminescence intensity of 1532 nm emission excited with 455 nm increases 4.2 times after the introduction of C e 3 + ions because of C e 3 + → E r 3 + radiation-reabsorption energy transfer and nonradiative energy transfer sensitization as well as the 4 I 11 / 2 ( E r 3 + ) + 2 F 5 / 2 ( C e 3 + ) → 4 I 13 / 2 ( E r 3 + ) + C e 3 + ( 2 F 7 / 2 ) cross relaxation between C e 3 + and E r 3 + ions. The result shows that the developed material is convenient to obtain high-efficiency, near-infrared emission using a commercial blue GaN LED as a pumping source.

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Near-infrared emission from modified zinc oxide hybrid nanostructures

Cited by 2 publications

References 38 publications

Near-infrared photoluminescence radiation from the interface of an annealed ZnO nano thin film/silicon heterostructure array

Near-infrared photoluminescence radiation from the interface of an annealed ZnO nano thin film/silicon heterostructure array

Enhancement of 1532 nm emission in Ce³⁺, Er³⁺ co-doped Ca_1.5Y_1.5Al_3.5Si_1.5O₁₂

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Near-infrared emission from modified zinc oxide hybrid nanostructures

Cited by 2 publications

References 38 publications

Near-infrared photoluminescence radiation from the interface of an annealed ZnO nano thin film/silicon heterostructure array

Near-infrared photoluminescence radiation from the interface of an annealed ZnO nano thin film/silicon heterostructure array

Enhancement of 1532 nm emission in Ce3+, Er3+ co-doped Ca1.5Y1.5Al3.5Si1.5O12

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Product

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Enhancement of 1532 nm emission in Ce³⁺, Er³⁺ co-doped Ca_1.5Y_1.5Al_3.5Si_1.5O₁₂