Organic light-emitting diodes (OLEDs) have become mainstream as the next generation of wearable displays that will outperform lasers and light-emitting diodes (LEDs). Recently, OLED-based platforms used for light applications were introduced. [1][2][3] In particular, deep red to nearinfrared (DR/NIR) OLEDs have emerged in the past few years because they can be applied for night vision displays, optical sensors, and phototherapy. [4] However, DR/NIR emitters exhibit intrinsic defects: these emitters are prone to undesired nonradiative decay pathways owing to the narrow bandgap. According to the energy gap law, the nonradiative decay rate (k nr ) is inversely proportional to the bandgap. In addition to this, the radiative rate (k r ) has a cubic dependence on the transition energy, so that it is expected to get smaller for lower energy emitters, implying that DR/NIR emitters have poor quantum efficiencies because of the incorporation of ground-and excited-vibrational energy states. [5][6][7][8][9] Consequently, research on high efficiency DR/NIR OLEDs has lagged behind that on visible-region OLEDs. To overcome this limitation, diverse ways of boosting the DR/NIR efficiency were introduced. In general, there are three kinds of DR/NIR emitters for high efficiency DR/NIR OLEDs: donor-acceptordonor (D-A-D) type, [10,11] thermally activated delayed fluorescence (TADF), [12][13][14][15] and transition-metal complexes. [16,17] DR/ NIR fluorophores of the D-A-D type have been researched to provide DR/NIR OLEDs with cost advantage and versatility. However, most DR/NIR OLEDs based on the D-A-D type show extremely low external quantum efficiency (EQE), radiance, and unexplained operational lifetime for practical application. [10,11] TADF DR/NIR emitters utilize nonradiative triplet excitons that move to a singlet region and achieve 100% internal quantum efficiency (IQE). [18] Nonetheless, there are chronic constraints with fluorescence quenching. Therefore, TADF-based DR/NIR OLEDs have a low luminance value. Meanwhile, high-efficiency DR/NIR OLEDs using transition metal complexes such as osmium (Os), [19][20][21] platinum (Pt), [22][23][24][25][26] and iridium (Ir) [27][28][29][30][31][32][33][34][35][36][37][38]