Near infrared image sensor with integrated germanium photodiodes.

Kaufmann, R.; Isella, Giovanni; Sánchez-Amores, A.; Neukom, S.; Neels, Antonia; Neumann, László; Brenzikofer, Alain; Dommann, Alex; Urban, Christian; Känel, H. von

doi:10.1063/1.3608245

Cited by 59 publications

(30 citation statements)

References 11 publications

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“…Introduction of tensile strain can be used to improve the light emission of Ge [2]. Recently Ge has received a lot of attention for its use in photodetectors, integrated on Si [3,4,5,6,7]. Furthermore optically pumped lasing [8] and electrically pumped lasing [9] in Ge, integrated on Si substrates, has been demonstrated very recently.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of bulk germanium

et al. 2012

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We have performed photoluminescence (PL) measurements on intrinsic and doped bulk Ge substrates as a function of temperature and excitation power. A weak luminescence feature at 738 meV is observed at 7 K for Ge substrates with Al and Sb dopants, but not for intrinsic and Ga doped Ge. This feature can be explained by no-phonon (NP) assisted recombination of free excitons. Besides the NP feature, we observe intense luminescence peaks at 730 meV, 710 meV and 702 meV, which can be attributed to phonon assisted exciton recombination of transverse acoustic (TA), longitudinal acoustic (LA) and transverse optical (TO) phonons in the (111) direction, respectively. Besides these features, we observe luminescence at energy below 700 meV (1.77 μm). This luminescence shows much lower intensity (about 500 times) than the LA replica. The observed luminescence can be explained as a 2-phonon assisted recombination with the previously mentioned TA, LA and TO phonons with momentum in the (111) direction (at the L point) and a TO phonon at the Γ point. The power dependence of the integrated PL shows a log-log dependence with power factor of 2.02 at 9 K. This confirms that the PL originates from recombination of excitons, which are indirectly generated by creation of electrons and holes. The low energy PL edge follows the temperature dependence of the band gap as function of temperature, whereas the high energy PL edge shows an exponential broadening as function of temperature.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence of bulk germanium

et al. 2012

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“…Basically, in view of the much higher surface-to-volume ratio of a 3D Ge crystal compared to the larger diodes processed from continuous Ge films, a big concern was the surface leakage currents. Previously, p-i-n Ge/Si heterojunction diodes have been fabricated by standard photolithography, and reactive ion or wet chemical etching from comparatively thin LEPECVD-grown Ge layers [15][16][17][18]. These photodiodes have been successfully applied to CMOS-integrated near-infrared pixel detectors due to their low dark currents densities, of the order of ~10 -4 A/cm 2 [18].…”

Section: Resultsmentioning

confidence: 99%

Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon

Falub

Kreiliger

Taboada

et al. 2012

CAS 2012 (International Semiconductor Conference)

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In the quest for a Ge x-ray detector monolithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks. It consists of replacing the conventional continuous layers by space-filling arrays of strain-and defect-free Ge crystals, the width, height and shape of which are controlled by tuning epitaxial growth onto micrometer-sized features deeply etched into Si-substrates. Heterojunctions formed between the Ge-crystals and the Si-substrate exhibit the required rectifying diode behavior with low dark currents (<1 mA/cm 2 ).

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“…• C. This growth procedure has been proved to be compliant with CMOS frontend integration [14,15]. The substrates were then transferred to a Gen II MBE system for the III-V growth.…”

Section: Methodsmentioning

confidence: 99%

High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge‐on‐Si substrates

Bietti

Cavigli

Abbarchi

et al. 2011

Phys. Status Solidi C

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We report on the growth and optical characterization by macro and micro photoluminescence measurements of high optical quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Si substrates. The quantum nanostructures show optical performances comparable to those achievable with the most advanced realized on GaAs substrates.The adopted growth procedures show also the possibility to fabricate the active layer maintaining a low thermal budget compatible with back‐end integration of the fabricated materials on integrated circuits. We demonstrate the possibility to embed GaAs nanostructured devices such as intersubband detectors and single quantum emitters on Si substrates. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Near infrared image sensor with integrated germanium photodiodes.

Cited by 59 publications

References 11 publications

Photoluminescence of bulk germanium

Photoluminescence of bulk germanium

Three dimensional heteroepitaxy: A new path for monolithically integrating mismatched materials with silicon

High quality GaAs quantum nanostructures grown by droplet epitaxy on Ge and Ge‐on‐Si substrates

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