Near‐Infrared‐Light Photodetectors Based on One‐Dimensional Inorganic Semiconductor Nanostructures

Liang, Feng‐Xia; Wang, Jiu-Zhen; Li, Zhipeng; Luo, Lin‐Bao

doi:10.1002/adom.201700081

Cited by 55 publications

(31 citation statements)

References 114 publications

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“…Owing to the intrinsic strong spin-orbit interaction, large g-factor, high carrier mobility, and narrow bandgap, Sb-based III-V semiconductors have been considered as the superior candidates for next generation quantum [1][2][3][4][5], electronics [6][7][8][9] and photonics devices [10][11][12][13]. For quantum computing, semiconductors with a geometry of one-dimensional nanowires (1D NWs, 1D NWs are nanostructures, achieved by reducing two-dimensions of the bulk materials to the nanometer scale thick [14]) are the ideal research platform, because of a topological superconducting region arises in the 1D semiconductor NW when it is brought in contact with a superconducting material, resulting in the expected Majorana fermions on the boundary of the topological and non-topological NW regions [15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

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Section: Introductionmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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“…Near‐infrared (NIR) light, which is invisible to human eyes, has been widely used for various applications such as bioimaging of cells, optical communication networks, optical tomography, industrial equipment monitoring, night vision systems, etc . To date, NIR detectors have been fabricated with inorganic semiconducting materials including Si and metal oxide nanocrystals . However, inorganic materials are inherently rigid and heavy so that they have a fundamental limitation for flexible/bendable NIR detectors in the flexible and wearable electronics era …”

Section: Introductionmentioning

confidence: 99%

Flexible Near‐Infrared Plastic Phototransistors with Conjugated Polymer Gate‐Sensing Layers

Han

Lee

Kim

et al. 2018

Adv Funct Materials

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Flexible near-infrared (NIR) light-sensing detectors are strongly required in the fast-growing flexible electronics era, because they can serve as a vision system like eyes in various innovative applications including humanoid robots. Recently, keen interest has been paid to organic phototransistors due to their unique signal amplification and active matrix driving features over organic photodiodes. However, conventional NIR-sensing organic phototransistors suffer from the limited use of organic materials because the channel layers play a dual role in both charge transport and sensing so that organic semiconducting materials with reasonably high charge mobility can be applied only. Here, it is demonstrated that a conjugated polymer, poly[{2,5-bis-(2-ethylhexyl)-3,6-bis-(thien-2-yl)-pyrrolo[3,4-c]pyrrole-1,4-diyl}co-{2,2′-(2,1,3-benzothiadiazole)]-5,5′-diyl}] (PEHTPPD-BT), which exhibits no transistor performance as a channel layer, can stably detect a NIR light (up to 1000 nm) as a gate-sensing layer (GSL) when it is placed between gateinsulating layers and gate electrodes. The flexible array (10 × 10) detectors with the PEHTPPD-BT GSLs could effectively sense NIR light without visible light interference by applying visible light cut films.

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“…And as the synthesis method continues to increase, the crystallinity of the material is getting better and better. Finally, with the increasing preparation and performance of devices, the application prospects of 1D semiconductor nanomaterials are becoming more and more broad …”

Section: Promising Applications Of Low‐dimensional Semiconductor Matementioning

confidence: 99%

“…Finally, with the increasing preparation and performance of devices, the application prospects of 1D semiconductor nanomaterials are becoming more and more broad. 178 The PDs of single 1D materials have undergone numerous studies (Table 3), and the performance has gradually evolved toward high responsivity, high quantum efficiency, and rapid response. For example, Sb 2 S 3 NWs prepared by a sulfur-assisted vapor deposition method, which produces PDs exhibits excellent photoelectric properties.…”

Section: D Pdsmentioning

confidence: 99%

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

Fang

Zhou

Xiao

et al. 2019

InfoMat

130

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Low‐dimensional (including two‐dimensional [2D], one‐dimensional [1D], and zero‐dimensional [0D]) semiconductor materials have great potential in electronic/optoelectronic applications due to their unique structure and characteristics. Many 2D (such as transition metal dichalcogenides and black phosphorus) and 1D (such as NWs) materials have demonstrated superior performance in field effect transistors, photodetectors (PDs), and some flexible devices. And in some hybrid structures of 0D materials and 1D or 2D materials, the modification of 1D and 2D devices by 0D materials is embodied. This type of hybrid heterostructure has a larger performance optimization compared with the original. In the application of PDs, the variety of low‐dimensional materials and properties enable wide‐spectrum detection from ultraviolet UV to infrared, which provide a potential option for PDs under various conditions. For flexible electronic devices, high performance and mechanical stability are two important features. Low‐dimensional materials offer unparalleled advantages in flexible devices. In this review, we will focus on the various low‐dimensional materials that have been extensively studied and their applications in the electronics/optoelectronic and flexible electronics. From the composition and lattice structure of materials (including alloys) to the construction of various devices and heterostructures, we will introduce their application and recent development under various conditions. These works can provide valuable guidance for the construction and application of more high‐performance and multifunctional devices.

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Near‐Infrared‐Light Photodetectors Based on One‐Dimensional Inorganic Semiconductor Nanostructures

Cited by 55 publications

References 114 publications

Recent advances in Sb-based III–V nanowires

Recent advances in Sb-based III–V nanowires

Flexible Near‐Infrared Plastic Phototransistors with Conjugated Polymer Gate‐Sensing Layers

Recent advances in low‐dimensional semiconductor nanomaterials and their applications in high‐performance photodetectors

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