Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells

Cen, L. B.; Shen, Bo; Qin, Z. X.; Zhang, G. Y.

doi:10.1063/1.3091280

Cited by 8 publications

(9 citation statements)

References 16 publications

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“…Ungan et al 37 computed the intersubband optical absorptions and refractive index changes in modulation-doped asymmetric double quantum wells. The nonlinear optical absorption in GaInNAs/GaAs double quantum wells under intense laser field was reported by Ungan et al, 38 whereas Cen et al 39 studied the intersubband transition in AlN/ GaN coupled double quantum wells. Despite the important results of the cited works, a systematic study on the linear and nonlinear optical absorptions in double Al x Ga (1Àx) N/GaN quantum wells is still lacking.…”

Section: Introductionmentioning

confidence: 93%

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm

Dakhlaoui

2015

Journal of Applied Physics

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Articles you may be interested inInfluence of polarization induced electric fields on the wavelength and the refractive index of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys. 105, 093109 (2009); 10.1063/1.3124373 Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells Refractive-index nonlinearities of intersubband transitions in GaN/AlN quantum-well waveguides J. Appl. Phys. Influence of applied electric fields on the absorption coefficient and subband energy distances of intersubband transitions in AlN/GaN coupled double quantum wells J. Appl. Phys.In the present paper, the linear and nonlinear optical absorption coefficients and refractive index changes between the ground and the first excited states in double GaN/Al x Ga (1Àx) N quantum wells are studied theoretically. The electronic energy levels and their corresponding wave functions are obtained by solving Schr€ odinger-Poisson equations self-consistently within the effective mass approximation. The obtained results show that the optical absorption coefficients and refractive index changes can be red-and blue-shifted through varying the left quantum well width and the aluminum concentration x b2 of the central barrier, respectively. These structural parameters are found to present optimum values for carrying out the transition of 0.8 eV (1.55 lm). Furthermore, we show that the desired transition can also be achieved by replacing the GaN in the left quantum well with Al y Ga (1Ày) N and by varying the aluminum concentration y Al . The obtained results give a new degree of freedom in optoelectronic device applications such as optical fiber telecommunications operating at (1.55 lm). V C 2015 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 93%

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm

Dakhlaoui

2015

Journal of Applied Physics

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“…Next, we turn to calculate the physical parameters modulated by strain and the BEF. The strain tensor components are given by 13 and where a j is the unstrained lattice constant of the j layer material. c 11, j , c 12, j , c 13, j , and c 33, j are the elastic constants, respectively.…”

Section: Strain Modification On Physical Parametersmentioning

confidence: 99%

“…Recent works have shown that this effect obviously influences the impurity and exciton states in wurtzite GaN/Al x Ga 1− x N heterojunctions and QWs 11, 12. A set of detailed discussions about the influence from strain‐induced piezoelectric and spontaneous polarization on the intersubband transition of electrons in AlN/GaN DQWs was presented by Cen et al 13. Analogous to the electronic confinement effect that occurs in semiconductor quantum wells, the resonant photonic states of photonic DQWs composed of two different photonic crystals were studied by Cox and Singh 14 to show the modulation effect of wells and barriers.…”

Section: Introductionmentioning

confidence: 99%

Binding energies of excitons in strained [0001]‐oriented wurtzite AlGaN/GaN double quantum wells

Zhu

Ban

2010

Physica Status Solidi (b)

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A variational method combined with a numerical computation is adopted to investigate binding energies of excitons in wurtzite AlGaN/GaN double quantum wells. The strain modification on material parameters and the built-in electric fields (BEFs) produced by spontaneous and strain-induced piezoelectric polarization are taken into account. The dependences of excitonic binding energies on the structural dimension including the widths of asymmetric wells and central barrier are presented. The results indicate that the BEF, which is very strong and can be exactly modulated by the structural dimension, plays a dominant role in determining the binding energy. The exciton is almost indirect one for an asymmetric well influenced by the BEF. The binding energy is very small and is insensitive to the structural dimension. The variation of binding energy versus the widths of both the wells and central barrier in an asymmetric structure is rather different from that in a symmetric one.

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“…The variation in the structural parameters or the externally applied bias or appropriate combination of both can tune the energy subband positions and consequently the intersubband gap in the well to tailor the effective band gap in nanostructures in contrary to the fixed band gap in bulk counterparts. Researchers have utilized this novel feature to design intraband or intersubband photodetectors using multiple quantum well structures for color spectra detection that overcome the limitation of monochromatic wavelength absorption by traditional bulk interband photodetectors [4][5][6]. In recent days Quantum Well Infrared Photodetectors (QWIPs) are widely used for short, mid, long and very-long wavelength infrared detection, thermal imaging, medical imaging and many other real life applications [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

ABSORPTION COEFFICIENT IN A MQW INTERSUBBAND PHOTODETECTOR WITH NON-UNIFORM DOPING DENSITY & LAYER DISTRIBUTION

Mukherjee

Das

2014

PIER M

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Abstract-Selective wavelength tuning of multiple quantum well based infrared photodetector is achieved by non-uniform doping distribution as well as dimensional variation in the structure. Result is obtained from the computation of the intersubband transition energy through self-consistent solution of the Poisson's and Schrödinger equations with appropriate boundary conditions. Absorption coefficient is estimated in presence of external electric field applied along the direction of confinement. Suitable choice of structural parameters is required to tailor the peak position of absorption spectra for application in the infrared range as optical receiver.

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Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells

Cited by 8 publications

References 16 publications

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm

Linear and nonlinear optical absorption coefficients and refractive index changes in GaN/AlxGa(1−x)N double quantum wells operating at 1.55 μm

Binding energies of excitons in strained [0001]‐oriented wurtzite AlGaN/GaN double quantum wells

ABSORPTION COEFFICIENT IN A MQW INTERSUBBAND PHOTODETECTOR WITH NON-UNIFORM DOPING DENSITY & LAYER DISTRIBUTION

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