Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts

Horváth, Z.; Gyuro, I.; Németh-Sallay, M.; Tüttö, P.

doi:10.1016/0042-207x(90)90156-s

Cited by 10 publications

(3 citation statements)

References 6 publications

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“…2, the theoretical curves published by Sze and Gibbons [19] and the experimental data published by other workers [11±13] in dierent growth techniques are also shown. From this ®gure it is seen that the depletion layer widths derived by several workers [12,13] are agreeing with each other except for the work done by Horvath et al [11] in the vapor-phase (VPE) growth process of planar diodes. From Fig.…”

Section: Resultssupporting

confidence: 71%

“…Despite some scatter in the experimental data points arising from the low doping level material, reasonably good agreement was observed with the experimental data presented by Baliga et al [13] using the vapor and liquid phase epitaxially grown materials. However, the breakdown voltages measured by Horvath et al [11] either in planar or mesa diodes were far below from the theoretical curves. They pointed out that this may be due to very large defect densities greater than 1 Â 10 6 cm À2 or may be due to the surface/interface eects or the edge eect in¯uences the breakdown at low concentrations [17,24].…”

Section: Resultsmentioning

confidence: 82%

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Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Hudait

Krupanidhi

1999

Solid-State Electronics

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The breakdown characteristics of Au/n-GaAs Schottky contacts on metal-organic vapor-phase epitaxy grown Sidoped n-GaAs were measured in the doping range of 6 Â 10 15 ±1.5 Â 10 18 cm À3 . These results are compared with the experimentally measured breakdown voltages by several workers and also with the theoretical calculation predicted by Sze and Gibbons [Sze SM, Gibbons G. Appl. Phys. Lett. 1966;8:111]. Good agreement was observed between the measured data and the breakdown voltages by Sze and Gibbons in the high doping concentrations. The maximum depletion layer width is found to be in good agreement with the theoretical analysis by Sze and Gibbons. The breakdown voltage at higher doping concentration will be useful for the design and development of GaAs switching devices and the emitter-base region of bipolar transistors. #

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Section: Resultssupporting

confidence: 71%

Section: Resultsmentioning

confidence: 82%

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Hudait

Krupanidhi

1999

Solid-State Electronics

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“…When molar ratio increases (i.e. iodine concentration decreases) the effect of the interfacial layer minimise accordingly, and thus the barrier height reduces and reached its minimum value for NRI-12 M material [34]. For higher molar ratios, the majority of the doped iodine does not play as charge acceptors.…”

Section: Investigation Of Saturation Current Density Ideality Factormentioning

confidence: 99%

Charge transport properties of semiconducting natural rubber (Cis 1,4-polyisoprene)

Praveen

Mandin²,

Sauvage³

2020

Microelectronic Engineering

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For the first time, an effort has been made to evaluate the charge transport properties of semiconducting natural rubber. Four different ratios of iodine-rubber composites are synthesised and tested for charge transport by current density-voltage characteristics (J-V) and impedance spectroscopy. The optimal doping ratio for best mobility value is identified, and the effect of injection barrier height on mobility is discussed. An attempt has also been made to correlate the density of states (DOS) with mobility and doping ratio. The transport properties of semiconducting natural rubber are compared with one of the most popular p-type material, Poly(3-hexylthiophene-2,5-diyl) (P3HT) under the same ambience and experimental conditions to demonstrate its potential as a cost-effective and green alternative organic semiconductor.

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Refractory metallizations on GaAs FET’s

Kiriakidis

1994

Acta Physica Hungarica

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Near-interface concentration reduction in n-type Au/CrGaAs Schottky contacts

Cited by 10 publications

References 6 publications

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Charge transport properties of semiconducting natural rubber (Cis 1,4-polyisoprene)

Refractory metallizations on GaAs FET’s

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