2019
DOI: 10.3390/app9224725
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Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers

Abstract: Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nano… Show more

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