Near-surface GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>As quantum wells: Interaction with

Moison, J. M.; Elcess, K.; Houzay, F.; Marzin, J. Y.; Gerard, J. M.; Barthe, F.; Bensoussan, M.

doi:10.1103/physrevb.41.12945

Cited by 111 publications

(59 citation statements)

References 20 publications

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“…The recovery of PL intensity in core-shell structures is also explained by the surrounding AlGaAs barrier that prevents the coupling of photoexcited carriers in GaAs with the surface states. 16,17 These results are consistent with our previous reports on GaAs/ AlGaAs nanowires, 12 and reveal a clue to obtaining high-quality and optically active nanowires.…”

supporting

confidence: 82%

Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Noborisaka

Motohisa

Hara

et al. 2005

Applied Physics Letters

185

172

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We fabricated GaAs/ AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs ͑111͒B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/ AlGaAs core-shell structures. Microphotoluminescence measurements of GaAs and GaAs/ AlGaAs core-shell nanowires reveal an enhancement of photoluminescence intensity in GaAs/ AlGaAs core-shell structures. Based on these core-shell nanowires, AlGaAs nanotubes were formed by using anisotropic dry etching and wet chemical preferential etching to confirm the formation of a core-shell structure and to explore a new class of materials.

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supporting

confidence: 82%

Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Noborisaka

Motohisa

Hara

et al. 2005

Applied Physics Letters

185

172

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“…al. [2] on GaAsJAlGaAs QWs yield a red shift instead of the blue shift reported here. This was explained by a coupling of QW states with surface states.…”

Section: Energy (Ev)mentioning

confidence: 41%

“…Therefore an influence of the surface of the samples on the exciton states is neglected. However recent studies have shown that even for QWs with top barrier thicknesses of several nanometers one must take into account surface effects [2] [3].…”

Section: Introductionmentioning

confidence: 99%

Excitonic transitions in GaInAs/GaAs surface quantum wells

Dreybrodt

Forchel

Reithmaier

1993

Le Journal de Physique IV

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We have studied the influence of the surface on the optical properties of GaInAs/GaAs quantum wells for various top barrier thicknesses. A blue shift of the emission lines up to about 25 meV combined with a line broadening is observed for a 5 nm thick surface quantum well (20% In) without any GaAs coverage. The line broadening as well as the energy shift depend strongly on the quantum well thickness. This can be modeled by assuming a 5 eV vacuum potential at the surface.

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“…A few experiments have been done on quantum wells close to the interface semiconductor/air [20][21][22][23][24]. In GaAs/GaAlAs quantum wells, Moison et al [20] observed a dramatic decrease in luminescence intensity and a red shift of the luminescence line when the top barrier thickness was reduced (see Fig.…”

Section: Quantum Wellmentioning

confidence: 99%

“…Numerous experimental studies have been done either with fluorescent ions or dye moleculeS [12][13][14][15][16][17]. In semiconductor physics the effect of a cavity on the rate of spontaneous emission of a quantum well was recognized recently [18,19], and during the last years, only a few studies have been done on the effect of a dielectric environment [4] or a close interface [20][21][22][23][24] on the optical properties of nanostructures. There is, to our knowledge, no comprehensive review of all the situatioms in which the spontaneous emission of a nanocrystal (NC) or a quantum well (QW) is modifued by its environment.…”

Section: Introductionmentioning

confidence: 99%

Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface

Lavallard

1996

Acta Phys. Pol. A

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We review several situations in which the emission rate of a nanostructure is modified by its environment. We first consider smaJl objects embedded in media with different refractive indices. The local electromagnetic field and the rate of spontaneous emission of the nanostructure are enhanced or inhibited by the induced dipole charges on the interface. In quantum wells or nanocrystals embedded in a low dielectric constant medium, the binding energy of excitons is increased. In anisotropic microcrystals, the local field is anisotropic and emission of light is polarized. We consider especially the case of p+-doped porous silicon in which nanocrystals are elongated. Another interesting situation occurs when a dipole is in the vicinity of a dielectric interface. The local field acting on the dipole results from the interferences of incident and reflected beams. Contributions from evanescent waves are important when the dipole is located in the medium of low refractive index, very close to the surface. The intensity of emission and its pattern are modified by the vicinity of the dielectric interface. Close to the interface semiconductor/air, the exciton binding energy is increased. In the vicinity of a metallic surface, á nonradiative transfer to the metal occurs for small distances of the nano-object or quantum weJl to the surface and the quantum efficiency varies with the distance to the metallic surface. The exciton binding energy of a quantum well is decreased close to a metallic surface.PACS numbers: 78.20.Βh, 78.55.Cr, 78.55.Et 1. Introduction The rate of spontaneous emission of a dipole is not an intrinsic property of the dipole but depends on its environment [1]: dielectric medium [2-5], dielectric interface [6][7][8], metallic interface [9,10] or cavity [11]. The modification of the emission rate of a dipole has been studied theoretically for many years. Numerous experimental studies have been done either with fluorescent ions or dye moleculeS [12][13][14][15][16][17]. In semiconductor physics the effect of a cavity on the rate of spontaneous emission of a quantum well was recognized recently [18,19], and during the last years, only a few studies have been done on the effect of a dielectric

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Near-surface GaAs/Ga0.7Al0.3As quantum wells: Interaction with

Cited by 111 publications

References 20 publications

Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Fabrication and characterization of freestanding GaAs∕AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

Excitonic transitions in GaInAs/GaAs surface quantum wells

Light Emission by Semiconductor Nanostructures in Dielectric Medium or Close to Plane Interface

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