1993
DOI: 10.1109/3.234399
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Near threshold operation of semiconductor lasers and resonant-type laser amplifiers

Abstract: Abstract-The characteristics of a semiconductor laser operating in the threshold region are investigated systematically. In this transition region from below to above threshold, the linewidth versus injection current characteristic is found to be nonmonotonic: a local minimum of linewidth just below threshold and a local maximum just above threshold are confirmed experimentally. If a semiconductor laser works below threshold as a resonant optical amplifier or optical filter, the small-signal frequency bandwidt… Show more

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Cited by 11 publications
(11 citation statements)
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“…We check the approximation of |δ| a 0 a posteriori and we find that it generally holds (as was also shown in [40]), except near threshold (a 0 → 0), which is a case we discuss in Sec. VI C.…”
Section: A Instantaneous Single-mode Modelsupporting
confidence: 64%
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“…We check the approximation of |δ| a 0 a posteriori and we find that it generally holds (as was also shown in [40]), except near threshold (a 0 → 0), which is a case we discuss in Sec. VI C.…”
Section: A Instantaneous Single-mode Modelsupporting
confidence: 64%
“…We believe that this phenomenon could be explored using a future generalization of our formalism, with some modifications (extending earlier work [28,40] on linewidth enhancement from ASE).…”
Section: Generalized Multimode α Factormentioning
confidence: 79%
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