semiconductors, colloidal NCs simplify the coupling to the read-out circuit [9][10][11] (i.e., no hybridization step through indium bumps). Beyond the cost reduction, it also eases pixel pitch reduction, bringing it closer to the diffraction limit, [12,13] from 15 to 5 µm typically.Among potential material candidates, HgTe offers the widest spectral tunability. It can be grown under highly confined forms such as nanoplatelets [14][15][16] with bandedge around 800 nm, or as larger sizes (≫Bohr radius) with NCs absorbing in the THz range. [17,18] Over the recent years, significant progresses have been made on the device performance as their geometries have been improved. Compared to initial poorly ligand-exchanged films deposited on interdigitated electrodes, complex photodiodes, [4,19] and phototransistors presenting a reduced dark current and an enhanced photocarrier dissociation are now proposed. The control of the light-matter coupling is certainly one of the directions that have led to the most recent improvements. Cavities [20,21] and plasmonic resonators [22][23][24] have been introduced to obtain strongly-absorbing thin films. The interest for the light-matter coupling control is not only limited to the material absorption. It also raises interest in light emission [25] and also potentially in lasing regarding the
The limited investigation of the optical properties of HgTe nanocrystal (NC) thin films has become a bottleneck for the electromagnetic design of devices.Using broadband ellipsometry, the refractive index (n) and the extinction coefficient (k) are determined for a series of HgTe NC films relevant to infrared sensing applications. Electromagnetic simulations reveal that the n value of HgTe NC thin films can conveniently be approximated by its mean spectral value n = 2.35 ± 0.15. This complex optical index is then used to design a diode with i) a reduced amount of Hg containing material (thin film < 150 nm) and ii) a thickness of the device better-matched with the carrier diffusion length. It is demonstrated that introducing an aluminum grating onto the transparent conductive electrode leads to an enhanced absorption while reinforcing the work-function difference between the two electrodes. Broadband (≈1 µm), non-polarized, and strong absorption up to 100% is designed. This leads to a responsivity of 0.2 A W −1 and a detectivity of 2 × 10 10 Jones for 2 µm cut-off wavelength at room-temperature, while the time response is as short as 110 ns.