Near‐Unity External Quantum Efficiency in GaAs|AlGaAs Heterostructures Grown by Molecular Beam Epitaxy

Giannini, Nathan; Yang, Zhou; Ashish, K.; Albrecht, Alexander R.; Sheik‐Bahae, Mansoor

doi:10.1002/pssr.202100106

Physica Rapid Research Ltrs

2021

DOI: 10.1002/pssr.202100106

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Near‐Unity External Quantum Efficiency in GaAs|AlGaAs Heterostructures Grown by Molecular Beam Epitaxy

Nathan Giannini

Zhou Yang

K. Ashish³

et al.

Abstract: The external quantum efficiency (EQE) of a GaAs|AlGaAs double heterostructure, grown by molecular beam epitaxy, is measured as a function of temperature in the range of 350-100 K. Record EQEs of >80% at 300 K and >98% below 150 K are obtained. The temperature-dependent lifetime measurement that corroborates the EQE data is also reported, suggesting that interface recombination remains the dominant mechanism for nonradiative decay. These results offer promising prospects for using these structures in thermal ph… Show more

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2024

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Cited by 2 publications

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Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering

Shahahmadi,

Kivisaari,

Behaghel

et al. 2024

Applied Physics Letters

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Optimizing the efficiency of optoelectronic devices is challenging at low currents, even with high-quality materials, due to the dominance of non-radiative Shockley–Read–Hall recombination at low carrier densities. In this study, we nearly eliminate the typical non-radiative recombination current in a GaAs/GaInP double-heterojunction light-emitting diode (LED) by shifting the pn-junction 200 nm into the GaInP barrier layer on the n-side. This involves reducing the doping in the n-barrier to below the background p-type doping level to relocate the built-in electric field. As a result, the space charge recombination current with the ideality factor of two is strongly suppressed and remains concealed in our experimental dark current density–voltage measurements. The experimental results, coupled with our physics-based model, indicate the potential for considerable efficiency gains at current densities below ∼ 1 A/cm2. The findings prompt to carefully optimize the doping profiles of high efficiency LEDs and to reconsider the validity of using dark saturation currents as a metric for their performance.

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Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering

Shahahmadi,

Kivisaari,

Behaghel

et al. 2024

Applied Physics Letters

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show abstract

Quantum efficiency enhancement of reflective GaAs photocathodes with exponential-doping structure generating a favorable built-in electric field

Jiang,

Zhang,

Tong

et al. 2024

Opt. Express

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The rapid development of GaAs photocathodes has led to an increased focus on the attainment of high quantum efficiency. Three types of exponential-doping structures with a high to low doping concentration distribution from the interior to the surface are proposed for reflective GaAs emission layers. These three structures generate different built-in electric fields that facilitate photoelectron emission. The one-dimensional continuity equations for the increasing, constant, and decreasing types of built-in electric fields are derived, respectively. The electron concentration distribution and quantum efficiency varying with the wavelength are solved numerically by the finite difference method. The simulation results indicate that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is superior to that with the constant built-in electric field, while the GaAs photocathode with the decreasing type of built-in electric field shows the worst performance. Then, the designed GaAs photocathodes with the increasing and constant types of built-in electric fields are grown by metal-organic chemical vapor deposition and activated by cesium-oxygen alternating deposition. The measured spectral response curves show that the quantum efficiency of the GaAs photocathode with the increasing type of built-in electric field is higher in the whole band than that with the constant type of built-in electric field. In addition, the exponential-doping structure generating the increasing type of built-in electric field is beneficial for improving the surface potential barrier and increasing the surface electron escape probability.

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Near‐Unity External Quantum Efficiency in GaAs|AlGaAs Heterostructures Grown by Molecular Beam Epitaxy

Cited by 2 publications

References 20 publications

Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering

Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering

Quantum efficiency enhancement of reflective GaAs photocathodes with exponential-doping structure generating a favorable built-in electric field

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