Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Juntunen, Mikko A.; Heinonen, Juha; Vähänissi, Ville; Repo, Päivikki; Valluru, Dileep; Savin, Hele

doi:10.1038/nphoton.2016.226

Cited by 129 publications

(140 citation statements)

References 29 publications

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“…In Figure 4c, the device has a high photoresponsivity at 0.014 mW, which reaches 0.165 A/W (at 0 V bias) and 7.42 A/W (at −1 V bias), and the corresponding quantum efficiency ( EQE = Rhc/eλ ) is 80.2% at 0 V bias and 3611% at −1 V bias, respectively 35,36. This photoresponsivity is twice higher than that of the current commercial Si‐based UV photodiode, indicating that the silicon‐based photodiodes stacked with GAO CQDs have an obvious enhancement of UV photoresponse 37. A summarized development of multilayer‐stacked DUV photodiodes is shown in the Table 1 .…”

Section: Developments Of Multilayer‐stacked Duv Photodiodesmentioning

confidence: 85%

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Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Lin

Kan

Zheng

et al. 2020

Adv Elect Materials

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In the past, benefiting from the mature micro‐technologies of crystalline‐silicon (c‐Si), c‐Si electronic and optoelectronic devices have brought revolutionary convenience to daily lives, with sensitive visible and near‐infrared photodetectors, the basic device in cameras for visible spectroscopy and color imaging, as an example. However, the sensitivity of all‐Si photodetectors cannot meet the needs of deep‐ultraviolet (DUV) detection with important applications in spectral imaging analysis. Based on this circumstance, a 0D–3D silicon‐integrated photodiode is presented to obtain highly sensitive DUV detection. A vertically stacked graphene/GAO/Si back‐to‐back photodiode has high photoresponsivity (0.165 A/W and EQE ≈ 80.2% at 0 V bias, 7.42 A/W and EQE ≈ 3611% at −1 V bias) and fast response speed (3 ms) under DUV illumination by using composite modified wide‐band‐gap oxide colloidal quantum dots as the DUV sensitive layer. The performance of the detector is successfully verified by DUV imaging with a single‐point‐detection imaging system.

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Section: Developments Of Multilayer‐stacked Duv Photodiodesmentioning

confidence: 85%

“…[35,36] This photoresponsivity is twice higher than that of the current commercial Si-based UV photodiode, indicating that the silicon-based photodiodes stacked with GAO CQDs have an obvious enhancement of UV photoresponse. [37] A summarized development of multilayerstacked DUV photodiodes is shown in the Table 1.…”

mentioning

confidence: 99%

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Lin

Kan

Zheng

et al. 2020

Adv Elect Materials

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“…[9][10][11] However, for silicon photonics, because of its weak absorption over the wavelength band 0.9 µm due to the indirect absorption mechanism [12,13] and highly reflective surface across the electromagnetic spectrum, [14] Si-based broadband photodiodes indicate an unsatisfactory response to wide wavelength range of lights.Most of the reported silicon-based nano-/microsensors are still suffering from difficulties of further improving the responsivity and lack of adjustability. [9][10][11] However, for silicon photonics, because of its weak absorption over the wavelength band 0.9 µm due to the indirect absorption mechanism [12,13] and highly reflective surface across the electromagnetic spectrum, [14] Si-based broadband photodiodes indicate an unsatisfactory response to wide wavelength range of lights.…”

mentioning

confidence: 99%

“…

used semiconductor for discrete devices and integrated circuits, on account of the excellent compatibility with integrated circuits and fast development of nanofabrication techniques and nanomaterials. [9][10][11] However, for silicon photonics, because of its weak absorption over the wavelength band 0.9 µm due to the indirect absorption mechanism [12,13] and highly reflective surface across the electromagnetic spectrum, [14] Si-based broadband photodiodes indicate an unsatisfactory response to wide wavelength range of lights.Most of the reported silicon-based nano-/microsensors are still suffering from difficulties of further improving the responsivity and lack of adjustability. Piezo-phototronics is an effective approach to tune/modulate the charge carrier generation, separation or recombination, transport of electron-hole pairs at the interface/junction by the piezoelectric potential.

…”

mentioning

confidence: 99%

“…used semiconductor for discrete devices and integrated circuits, on account of the excellent compatibility with integrated circuits and fast development of nanofabrication techniques and nanomaterials. [9][10][11] However, for silicon photonics, because of its weak absorption over the wavelength band 0.9 µm due to the indirect absorption mechanism [12,13] and highly reflective surface across the electromagnetic spectrum, [14] Si-based broadband photodiodes indicate an unsatisfactory response to wide wavelength range of lights.…”

mentioning

confidence: 99%

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Piezo‐Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis–NIR Broadband Photodiode

Zou

Peng

et al. 2017

Advanced Materials

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Silicon underpins nearly all microelectronics today and will continue to do so for some decades to come. However, for silicon photonics, the indirect band gap of silicon and lack of adjustability severely limit its use in applications such as broadband photodiodes. Here, a high-performance p-Si/n-ZnO broadband photodiode working in a wide wavelength range from visible to near-infrared light with high sensitivity, fast response, and good stability is reported. The absorption of near-infrared wavelength light is significantly enhanced due to the nanostructured/textured top surface. The general performance of the broadband photodiodes can be further improved by the piezo-phototronic effect. The enhancement of responsivity can reach a maximum of 78% to 442 nm illumination, the linearity and saturation limit to 1060 nm light are also significantly increased by applying external strains. The photodiode is illuminated with different wavelength lights to selectively choose the photogenerated charge carriers (either electrons or holes) passing through the depletion region, to investigate the piezo-phototronic effect on electron or hole transport separately for the first time. This is essential for studying the basic principles in order to develop a full understanding about piezotronics and it also enables the development of the better performance of optoelectronics.

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Flexible Photodetectors with Nanomembranes and Nanowires

Kim

Park

Zhou

et al. 2019

Inorganic Flexible Optoelectronics

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Near-unity quantum efficiency of broadband black silicon photodiodes with an induced junction

Cited by 129 publications

References 29 publications

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Piezo‐Phototronic Effect on Selective Electron or Hole Transport through Depletion Region of Vis–NIR Broadband Photodiode

Flexible Photodetectors with Nanomembranes and Nanowires

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