Nearest-neighbor Mn antiferromagnetic exchange in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Mn</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:mtext>N</mml:mtext></mml:mrow></mml:math>

Granville, S.; Ruck, B. J.; Budde, F.; Trodahl, H. J.; Williams, G. V. M.

doi:10.1103/physrevb.81.184425

Cited by 34 publications

(37 citation statements)

References 54 publications

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“…However, other XAS studies [49][50][51] demonstrate that Mn is predominantly Mn 2+ (d 5 ). A similar conclusion was also reached by electron spin resonance [14] and magnetic measurements [15]. Clearly, a resolution of the uncertainty about the Mn valence state is imperative for further progress in the understanding and engineering of the Ga 1−x Mn x N DMS.…”

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confidence: 51%

What is the Valence of Mn inGa1−xMnxN?

et al. 2015

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We investigate the current debate on the Mn valence in Ga1−xMnxN, a diluted magnetic semiconductor (DMSs) with a potentially high Curie temperature. From a first-principles Wannier-function analysis, we unambiguously find the Mn valence to be close to 2+ (d 5 ), but in a mixed spin configuration with average magnetic moments of 4µB. By integrating out high-energy degrees of freedom differently, we further derive for the first time from first-principles two low-energy pictures that reflect the intrinsic dual nature of the doped holes in the DMS: 1) an effective d 4 picture ideal for local physics, and 2) an effective d 5 picture suitable for extended properties. In the latter, our results further reveal a few novel physical effects, and pave the way for future realistic studies of magnetism. Our study not only resolves one of the outstanding key controversies of the field, but also exemplifies the general need for multiple effective descriptions to account for the rich low-energy physics in many-body systems in general.

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confidence: 51%

What is the Valence of Mn inGa1−xMnxN?

et al. 2015

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“…Instead, a diversity of magnetic properties has been reported. For instance, no indication of ferromagnetic interactions was detected up to x = 36% in polycrystalline films prepared by ion-assisted deposition, 11 whereas T C values ranging from 8 K (Ref. 12) up to over 300 K (Ref.…”

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confidence: 99%

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

et al. 2011

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The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.

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“…35 Also, in Mn-doped GaN, the presence of donor defects controls the charge state of cation (Ga) substitutional Mn, hence the type of magnetic interactions: ferromagnetic for Mn 3+ , 36 antiferromagnetic for Mn 2+ . 37 …”

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confidence: 99%

Mixed Zn and O substitution of Co and Mn in ZnO

et al. 2011

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The physical properties of an impurity atom in a semiconductor are primarily determined by the lattice site it occupies. In general, this occupancy can be correctly predicted based on chemical intuition, but not always. We report on one such exception in the dilute magnetic semiconductors (DMS) Co-and Mn-doped ZnO, experimentally determining the lattice location of Co and Mn using β − emission channeling from the decay of radioactive 61 Co and 56 Mn implanted at the ISOLDE facility at CERN. Surprisingly, in addition to the majority substituting for Zn, we find up to 18% (27%) of the Co (Mn) atoms in O sites, which is virtually unaffected by thermal annealing up to 900 • C. We discuss how this anion site configuration, which had never been considered before for any transition metal in any metal oxide material, may in fact have a low formation energy. This suggests a change in paradigm regarding transition metal incorporation in ZnO and possibly other oxides and wide-gap semiconductors.

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Nearest-neighbor Mn antiferromagnetic exchange inGa1−xMnxN

Cited by 34 publications

References 54 publications

What is the Valence of Mn inGa1−xMnxN?

What is the Valence of Mn inGa1−xMnxN?

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

Mixed Zn and O substitution of Co and Mn in ZnO

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