Nearly Constant Electrical Resistance over Large Temperature Range in Cu3NMx (M = Cu, Ag, Au) Compounds

Abstract

Electrical resistance is a material property that usually varies enormously with temperature. Constant electrical resistivity over large temperature range has been rarely measured in a single solid. Here we report the growth of Cu3NMx (M = Cu, Ag, Au) compound films by magnetron sputtering, aiming at obtaining single solids of nearly constant electrical resistance in some temperature ranges. The increasing interstitial doping of cubic Cu3N lattice by extra metal atoms induces the semiconductor-to-metal transition in all the three systems. Nearly constant electrical resistance over 200 K, from room temperature downward, was measured in some semimetallic Cu3NMx samples, resulting from opposite temperature dependence of carrier density and carrier mobility, as revealed by Hall measurement. Cu3NAgx samples have the best performance with regard to the range of both temperature and doping level wherein a nearly constant electrical resistance can be realized. This work can inspire the search of other materials of such a quality.

Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding

“…The mechanism of Cu 4 N formation can be explained in the same way as shown in Fig. 6 c. Cu 4 N has one more Cu atom than Cu 3 N, but the lattice formation enthalpy of Cu 4 N is assumed to be the same as Cu 3 N because the Cu atom is interstitially doped into the empty space of Cu 3 N, which has a cubic anti-ReO 3 crystal structure 42 . Therefore, the standard enthalpy of formation of Cu 4 N is 13.23 eV, which is quite high compared to Cu 2 O (− 1.75 eV) as shown in Fig.…”

Effect of Si doping on structure, thermal expansion and magnetism of antiperovskite manganese nitrides Mn3Cu1−xSixN

“…optical fiber), by means of combining the positive thermal expansion (PTE) compensators [1][2][3][4][5]. Recently, the antiperovskite manganese nitrides (Mn 3 AN, A denotes transitional metal elements and/or semiconductor elements) have attracted the attention of physicists and material scientists owing to assembling the isotropic NTE [6][7][8], the advantageous electric/thermal conductivity [9][10][11] and the outstanding mechanical performance [12].…”

p- ton-Type Conversion and Nonmetal–Metal Transition of Lithium-Inserted Cu3N Films

“…Because this structure is relatively open, Cu 3 N can incorporate various “foreign” atoms in the empty body center interstitial sites. Transition metal-inserted M x Cu 3 N (M = Ni, Cu, Zn, Pd, Cd, and Au) compounds show metallic electrical conductivity, − whereas Cu 3 N is a semiconductor. This observation suggests that the insertion of “foreign” atoms could be another method for controlling the electrical conductivity.…”