Nearly Dislocation-free Ge/Si Heterostructures by Using Nanoscale Epitaxial Growth Method

Luo, Guang-Li; Ko, Chih-Hsin; Wann, H.-J.; Chung, Cheng Ting; Han, Zong You; Cheng, C. C.; Chang, Chun–Yen; Lin, Hsueh-Yi; Chien, Chao–Hsin

doi:10.1016/j.phpro.2012.03.057

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Thanks for thin thickness of the Ge stripe, partial lattice mismatch could be released in the Ge-SiO 2 interface, which could avoid too many defects. 20,21 In other words, to obtain MDs-free GOI by RMG, the Si concentration gradient of the Ge stripe in the growth region should be lower than 3.5%. This 0.24% compressive strain seem to be a residual strain.…”

Section: Resultsmentioning

confidence: 99%

Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

Liu

Wen

Zheng

et al. 2015

ECS J. Solid State Sci. Technol.

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Lateral growth of Ge on insulator was obtained at various annealing temperature by rapid melting growth. The strain distribution of Ge strip was measured with/without SiO2 micro-crucible by micro-Raman. Strain compensating in the Ge stripe between thermal tensile strain and compressive strain were observed. The compressive strain was attributed to the Si-Ge lattice mismatch along the Ge strip. When the Si concentration gradient was lower than ∼3.5%, almost fully-strained Ge strip was obtained. When the Si concentration gradient was larger than ∼3.5%, strain relaxation was observed. The highest average residual compressive strain was about 0.24% in growth region.

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Section: Resultsmentioning

confidence: 99%

Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

Liu

Wen

Zheng

et al. 2015

ECS J. Solid State Sci. Technol.

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“…There are two general methods for the QDs preparation, which are displayed in the last decade: (1) the nano-size formation of semiconductor particles using colloidal chemistry [40], (2) the epitaxial growth and/or nano-scale patterning is used [41], i.e. Utilizing lithography-established technology [42].…”

Section: Synthesis Of Only Core In Quantum Dotsmentioning

confidence: 99%

Quantum Dot Nanomaterials: Preparation, Characterization, Advanced Bio-Imaging and Therapeutic Applications

Nabil,

Megahed

2023

J Fluoresc

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The bio-imaging technology is one of the most significant modern applications used in several fields, including early diagnosis of many illnesses that are most important diseases facing humanity and other vital uses. The primary advancement in nanotechnology is the creation of innovative fluorescence probes called quantum dots (QDs). The use of molecular tagging in research, in vivo, and in vitro studies is revolutionized by quantum dots. The application of QD indicates conversion in natural imaging and photography has demonstrated extraordinary appropriateness in bio-imaging, the discovery of novel drugs, and delivery of targeted genes, biosensing, photodynamic therapy, and diagnosis. New potential methods of early cancer detection and treatment management are being researched as a result of the special physical and chemical characteristics of QD probes. The bio-imaging technique depends on the fluorescent emission of the used materials, which is paired with living cells that are easy to see it in 3D without any surgical intervention. Therefore, the use of QDs many types that have unique and appropriate properties for use in that application; In terms of fluorescent emission strength, duration and luminosity.This review article displays some methods of preparation for QDs nanomaterials and the devices used in this. In addition, it presentssome of challenges that must be avoided for the possibility of using them in the bio-imaging field; as toxicity, bio-compatibility, and hydrophilization. It’s reviewed some of the devices that use QDs in bio-imaging technique, the QDs application in cell analysis-imaging, and QDs application in vivo imaging.

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