Nearly pure spin-valley sideband tunneling in silicene: Effect of interplay of time periodic potential barrier and spin-valley-dependent Dirac mass

Abstract

We study massive Dirac fermion tunneling through time periodic potential in a silicene-based N/TP/N junction, where N's are normal silicene regions and TP is the time periodic potential barrier. The fermions would absorb or emit photons due to the presence of the Floquet sidebands created in the TP. The nearly perfect spin-valleysideband filtering is predicted. Applying only the exchange field leads to just only the electron absorbing a single photon almost purely allowed to tunnel through the junction for the large electric field. Reversing direction of electric field can select spin of the allowed electron. In the case of applying only off-resonant circularly polarized light, just only the electron absorbing a single photon with spin up, is almost purely allowed to tunnel through the junction. The valley is also selected by reversing direction of the electric field. The controllable sideband channel may be applicable for sideband-based spin-valleytronics.

Anomalous Floquet tunneling in uniaxially strained graphene

“…This approach allows a simplified vision of electron tunneling through sidebands. Electrons impinging the oscillating potential barrier are reflected or refracted from different energy channels by the absorption or emission of one or multiple photons [43,[48][49][50][51][52][53][54][55][56][57][58]. In this way, Floquet scattering has been used successfully for explaining the constructive interference of continuum and bound states in quantum wells, an effect known as Fano resonances [59][60][61][62][63][64][65].…”