Need a Change? Try GeTe: A Reconfigurable Filter Using Germanium Telluride Phase Change RF Switches

Wang, Muzhi; Lin, Feng; Rais‐Zadeh, Mina

doi:10.1109/mmm.2016.2608699

Cited by 26 publications

(3 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An isolation of around 10 dB is considered to be sufficient for reconfigurable devices, whereas microwave and millimeter‐wave operation of the switches is particularly attractive for reconfigurable antennas/surfaces for wireless communications and IoT, space applications, remote sensing, surveillance, and beam‐forming circuits . FET switch design offers several advantages, including very low power consumption as compared to PIN diodes, fast switching times and normal temperature operation as compared to phase‐change temperature tunable switches (GeTe and VO 2 ) …”

Section: Discussionmentioning

confidence: 99%

Solution‐Processed InAs Nanowire Transistors as Microwave Switches

Mirkhaydarov

Votsi

Sahu

et al. 2018

Adv Elect Materials

View full text Add to dashboard Cite

and millimeter (mm)-wave applications, enabling rapid maskless prototyping, low temperature processing, and high density integration of microwave elements on large-area, lightweight flexible substrates. [1] Printable filters, [2] antennas, [3] true-time delay lines, [4] wearable frequency selective surfaces (FSSs), [5,6] reconfigurable antennas, [7] phase-arrays, [8] and reflect arrays [9] have been realized, which can enable wireless sensors in Internet of things (IoT) [10] and high data rate mm-wave fifth generation (5G) communications. [11,12] Microwave switches are key to enable reconfigurable antennas, arrays, and FSSs, to modify their radiation pattern, resonant frequency, and polarization. [13,14] Solution processable nanomaterials permit the integration of semiconductors and conductors, using low-temperature and inexpensive processing capability while compatible with flexible substrates. Main classes of solution processable semiconducting materials are conjugated mole cules, carbon nanotubes (CNTs), graphene flakes (GFs), and inorganic semiconducting nanoparticle inks, including semiconducting nanowires (NWs). Although organic semiconductors are the most convenient for solution based deposition, the low charge carrier mobility, 0.1-10 cm 2 V −1 s −1 [15,16] of organic printed field-effect transistors (FETs) results in very high device resistance from tens of kΩ to MΩ, limiting their application in microwave circuits. Other materials, such as CNTs and GFs, require chemical functionalization to be solution processable, which degrades charge transport properties resulting in field-effect mobilities of 9-42 cm 2 V −1 s −1 for CNTs [17][18][19] and below 1.2 cm 2 V −1 s −1 for GFs. [20][21][22] These low mobilities give rise to high channel resistances, thus making these materials less desirable for solution processable high performance microwave switches. The most promising class of materials are semiconducting single crystal NWs, such as III-V materials, that possess high charge carrier mobility in the range of hundreds to few thousand cm 2 V −1 s −1 , [23,24] and they do not require surface functionalization for ink formulations.In this work, we focus on solution processable InAs NWs due to the high electron mobility, reaching 6500 cm 2 V −1 s −1 at room temperature, [25] and low contact resistance with metal tracks, [26][27][28] thereby avoiding the very resistive Schottky barriers common with other semiconducting NWs. [29] Additionally, The feasibility of using self-assembled InAs nanowire bottom-gated fieldeffect transistors as radio-frequency and microwave switches by direct integration into a transmission line is demonstrated. This proof of concept is demonstrated as a coplanar waveguide (CPW) microwave transmission line, where the nanowires function as a tunable impedance in the CPW through gate biasing. The key to this switching capability is the high-performance, low impedance InAs nanowire transistor behavior with field-effect mobility of ≈300 cm 2 V −1 s −1 , on/off ratio of 10 3 , and resistance ...

show abstract

Section: Discussionmentioning

confidence: 99%

Solution‐Processed InAs Nanowire Transistors as Microwave Switches

Mirkhaydarov

Votsi

Sahu

et al. 2018

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…For example, the operation of conductive bridge RAM (CBRAM) devices [8,9] is based on the formation of conductive filaments via the electrochemical reaction of Ag ions. We have directly observed the formation of conductive filaments in GeTe [10], which is a typical phase change material used in phase change RAM [11,12], radio frequency switches [13,14], CBRAM [15,16], and thermoelectric devices [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Single-crystalline Ag2Te nanorods prepared by room temperature sputtering of GeTe

Nakaya

Nakaoka

2020

SN Appl. Sci.

View full text Add to dashboard Cite

We report a facile, single-crystalline Ag 2 Te nanorod formation based on electrochemical diffusion of Ag. The nanorods were grown non-epitaxially by sputtering deposition of GeTe on Ag 2 Te nanoparticles at room temperature. For the nanorod growth, the source of the Ag supply is not deposition but the diffusion of Ag from the nanoparticles. The growth of the single-crystalline Ag 2 Te nanorods required GeTe deposition onto Ag 2 Te nanoparticles, in contrast to the growth of amorphous Ag 2 Te nanorods caused by Te deposition onto Ag nanoparticles and the growth of other nanostructures caused by GeTe deposition on Ag nanoparticles. The GeTe deposition onto the Ag 2 Te nanoparticles of an amount equivalent to a 100-nm-thick film produced nanorods of a length ranging from 3 to 5 μm and a diameter ranging from 100 to 400 nm. We propose a model for the nanorod growth based on solid-state electrochemical reaction between GeTe and movable Ag ions, inducing nanoscale phase separation and precipitation of amorphous Ge. We suggest that the nanorod structure with a crystalline Ag 2 Te core and an amorphous Ge shell is useful for thermoelectric applications.

show abstract

“…Wireless communication systems require complex radio frequency (RF) front end modules to enable reconfigurable and multiband operations as RF mobile technology shifts from 4G to 5G technologies. These complex RF modules require RF switching technologies with low insertion loss, high linearity, high isolation, and high reliability [1]. In current cellular telecommunication systems, solid state RF switching devices are ubiquitous and used primarily because of their high reliability and ultra-fast switching speed.…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

2018

View full text Add to dashboard Cite

Advanced understanding of the physics makes phase change materials (PCM) and metal-insulator transition (MIT) materials great candidates for direct current (DC) and radio frequency (RF) switching applications. In the literature, germanium telluride (GeTe), a PCM, and vanadium dioxide (VO 2), an MIT material have been widely investigated for DC and RF switching applications due to their remarkable contrast in their OFF/ON state resistivity values. In this review, innovations in design, fabrication, and characterization associated with these PCM and MIT material-based RF switches, have been highlighted and critically reviewed from the early stage to the most recent works. We initially report on the growth of PCM and MIT materials and then discuss their DC characteristics. Afterwards, novel design approaches and notable fabrication processes; utilized to improve switching performance; are discussed and reviewed. Finally, a brief vis-á-vis comparison of resistivity, insertion loss, isolation loss, power consumption, RF power handling capability, switching speed, and reliability is provided to compare their performance to radio frequency microelectromechanical systems (RF MEMS) switches; which helps to demonstrate the current state-of-the-art, as well as insight into their potential in future applications.

show abstract

Need a Change? Try GeTe: A Reconfigurable Filter Using Germanium Telluride Phase Change RF Switches

Cited by 26 publications

References 28 publications

Solution‐Processed InAs Nanowire Transistors as Microwave Switches

Solution‐Processed InAs Nanowire Transistors as Microwave Switches

Single-crystalline Ag2Te nanorods prepared by room temperature sputtering of GeTe

Performance Comparison of Phase Change Materials and Metal-Insulator Transition Materials for Direct Current and Radio Frequency Switching Applications

Contact Info

Product

Resources

About