2007
DOI: 10.1088/0957-4484/18/6/065202
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Negative differential resistance and nonclassical capacitive behaviour in networks of metal clusters

Abstract: Monolayers of small metal clusters of type Au55[P(C6H5)3]12Cl6 were investigated with a low-temperature ultrahigh vacuum scanning tunnelling microscope. Apart from the usual charge-quantization phenomena, such as Coulomb blockade and staircase, negative differential resistance was observed by performing measurements at distinct locations on the cluster layers. The latter phenomenon can be understood from a ‘gate’ effect caused by neighbouring clusters and involving a nonclassical behaviour of the capacitances… Show more

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Cited by 5 publications
(6 citation statements)
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“…The above NDC mechanism repeats itself at bias values with periodicity , with the periodicity arising from consecutive single electron (or hole) charging events in the coupled channels. This mechanism is similar in spirit to NDC induced by populations switching in SET of coupled QDs [11,17,23], where the charging level of the blocked channel increases ( Fig. 2d) at the account of that of the conducing channel ( Fig.…”
mentioning
confidence: 55%
“…The above NDC mechanism repeats itself at bias values with periodicity , with the periodicity arising from consecutive single electron (or hole) charging events in the coupled channels. This mechanism is similar in spirit to NDC induced by populations switching in SET of coupled QDs [11,17,23], where the charging level of the blocked channel increases ( Fig. 2d) at the account of that of the conducing channel ( Fig.…”
mentioning
confidence: 55%
“…Because there is no reason for Device 3 to contain mainly smaller NPs than those of the other devices, its G(V) spectrum originates most probably from a sub-bilayer of NPs. In order to confirm this assumption, a further study (e.g., a Monte Carlo simulation 48 ) or an experimental proof (e.g., using crosssectional transmission electron microscopy) would be needed. However, both methods are challenging for the measured devices and are out of the scope of the present work.…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
“…Moreover, metal nanostructures are expected to be more robust against damage at high current loads as compared to molecules. Despite these advantages, NDR effects have rarely been reported in the electron transport through metal nanostructures, mostly for two reasons [16]. First, metal particles are often prepared on dielectric supports with low surface-free energy, where Vollmer-Weber growth guarantees the formation of compact and spatially confined aggregates [17].…”
Section: Introductionmentioning
confidence: 99%