2021
DOI: 10.1002/pssr.202000610
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Negative Differential Resistance Characteristics in Forming‐Free NbOx with Crystalline NbO2 Phase

Abstract: Negative differential resistance (NDR) in NbOx films attracts attention for potential application in neuromorphic computing. A continuous S‐type and abrupt snapback NDR characteristics are reported for NbOx devices. The NDR characteristics are expected to depend on the nature of the switching path in NbOx. Previous NDR studies have been performed mainly on amorphous NbOx films with an electroforming process to create a switching path. Herein, the NDR characteristics of a forming‐free NbOx device with crystalli… Show more

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Cited by 11 publications
(8 citation statements)
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“…Notably, current under positive voltage bias at segments 3 and 7 reach their maximum V NDR at ≈3 V (inset of Figure 2a), and then decrease with bias voltage, which is the so‐called NDR effect. NDR is usually observed for phase change material based memristors caused by Joule heating such as NbO x memristor, [ 31–33,37,38 ] which is unlikely to be the case in the present system. A simple possible scenario for the NDR is that due to current increase expected driven by voltage increase is not enough to compensate current drop caused by the breakdown of the conducting channels.…”
Section: Resultsmentioning
confidence: 82%
“…Notably, current under positive voltage bias at segments 3 and 7 reach their maximum V NDR at ≈3 V (inset of Figure 2a), and then decrease with bias voltage, which is the so‐called NDR effect. NDR is usually observed for phase change material based memristors caused by Joule heating such as NbO x memristor, [ 31–33,37,38 ] which is unlikely to be the case in the present system. A simple possible scenario for the NDR is that due to current increase expected driven by voltage increase is not enough to compensate current drop caused by the breakdown of the conducting channels.…”
Section: Resultsmentioning
confidence: 82%
“…[ 46 ] This issue can potentially be addressed using the Mott system with higher phase‐transition temperature, such as NbO 2 (≈1080 K). [ 47 ]…”
Section: Resultsmentioning
confidence: 99%
“…[46] This issue can potentially be addressed using the Mott system with higher phase-transition temperature, such as NbO 2 (%1080 K). [47] Lee et al [44] proposed a Joule heating model to point out the relationship between V th , V hold and temperature (T ). In this model, the Mott transition occurs when the voltage-induced Joule heating is sufficient to raise the crystal temperature to Mott transition temperature.…”
Section: Artificial Temperature Perception Neuron Based On Vo 2 Volat...mentioning
confidence: 99%
“…The results demonstrate that the TS characteristics remain stable at least below 0 °C but gradually disappear above 35 °C (Figure S12, Supporting Information), which could be related to the low phase transition temperature of VO 2 (˜340 K) [47] . This issue can potentially be addressed by using Mott system with higher phase transition temperature, such as NbO 2 (˜1080 K) [48] . Lee et al [44] proposed a Joule heating model to point out that the relationship between V th , V hold and temperature (T ).…”
Section: Artificial Temperature Perception Neuron Based On Vo 2 Volat...mentioning
confidence: 99%