Negative differential resistance (NDR) frequency conversion with gain

Abstract

Abstract-The dependence of the I-V characteristic of the negative differential resistance (NDR) devices on the power level and frequency of the rf input signal has been theoretically analyzed with a modified large-and small-signal nonlinear circuit analysis program [1,2]. The NDR devices we used in this work include both the tunnel diode

Negative Differential Interlayer Resistance in WSe2 Multilayers via Conducting Channel Migration with Vertical Double-Side Contacts

“…Furthermore, the observed conducting channel migration and the resulting negative differential interlayer resistance occur without heterojunctions at room temperature. Our findings would pave the way for numerous electronic applications based on 2D vdW multilayers such as frequency multiplier, , random number generator, , multivalued logic circuits, , and neuromorphic computing. , …”

“…Furthermore, the observed conducting channel migration and the resulting negative differential interlayer resistance occur without heterojunctions at room temperature. Our findings would pave the way for numerous electronic applications based on 2D vdW multilayers such as frequency multiplier, 40,41 random number generator, 42,43 multivalued logic circuits, 44,45 and neuromorphic computing. 46,47 To gain a better understanding of the carrier transport mechanism in 2D vdW multilayers, we briefly illustrate the direction of the vertical channel migration under electrostatic V G and V D bias conditions with VDC (Figure 5a,b).…”

Negative differential resistance induced by sulfur vacancies in monolayer MoS2 transistors

“…Since the discovery of the Esaki tunneling diode, 1, 2 the negative differential resistance (NDR) effect has found wide applications in the design of various devices, including logic switches, 3 memories, [4][5][6] and high-frequency oscillators. [7][8] Researchers have explored different materials and structures to exhibit NDR behavior, such as semiconductor-based tunneling diodes, ultra-thin field-effect transistors (FETs) using low-dimensional materials like carbon nanotubes, 9, 10 graphene, [11][12][13] or graphite, 14 and vertically-integrated two-dimensional (2D) layered van der Waals (vdW) heterostructures involving transition metal dichalcogenides (TMDs) like MoS2-MoTe2, 15 MoS2-WSe2, 16,17 and MoS2-WSe2-graphene. 18 Simplifying the fabrication process and enhancing practical applications, researchers aim to achieve the NDR effect at room temperature using a single material through a straightforward approach.…”

Defect-engineered room temperature negative differential resistance in monolayer MoS2 transistors

“…Since the discovery of the Esaki tunneling diode, 1,2 the negative differential resistance (NDR) effect has been widely applied in designing various devices such as logic switches, 3 computer memory, [4][5][6] and high-frequency oscillators. 7,8 In addition to typical semiconductor-based tunneling diodes, ultra-thin fieldeffect transistors (FETs), fabricated with low dimensional material channels, such as carbon nanotubes, 9,10 graphene [11][12][13] or graphite, 14 have also been reported to exhibit NDR behavior. Likewise, vertically-integrated two-dimensional (2D) layered van der Waals (vdW) heterostructures that involve the recently well-studied 2D transition metal dichalcogenides (TMDs), among others, possess the NDR effect and have been documented in several material arrangements, including MoS 2 -MoTe 2 , 15 MoS 2 -WSe 2 , 16,17 and MoS 2 -WSe 2 -graphene.…”