Negative differential resistance of a tunnel diode induced by an external microwave signal

Usanov, D. A.; Venig, S. B.; Orlov, V. E.

doi:10.1134/1.1262355

Cited by 4 publications

(2 citation statements)

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“…In [15] фе experimentally found mode of initiation оё NDR and switching т tunnel diode under е influence of ап external microwave signal [16] in the case when the bias without microwave signal is essentially less than the peak value is described.…”

Section: -02;4-22mentioning

confidence: 99%

Nonlinear dynamics оf microwave and optical semiconductor oscillators

Usanov,

Skripal,

Skripal

et al. 2002

AND

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The results оf experimental аnd theoretical investigations of the nonlinear phenomena in microwave and optical semiconductor oscillators are represented. It is shown that one оf the reasons of occurrence оf various nonlinear phenomena in semiconductor devices оf the microwave range is qualitative change оf their voltage-current characteristics, in particular occurrence оr disappearance of sections оf negative differential resistance under the influence оf high-power microwave radiation оn semiconductor structures. The external optical feedback forming autodyne operating mode of semiconductor lasers acts as the priority mechanism оf realization of their nonlinear operating mode in semiconductor laser structures.

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Section: -02;4-22mentioning

confidence: 99%

Nonlinear dynamics оf microwave and optical semiconductor oscillators

Usanov,

Skripal,

Skripal

et al. 2002

AND

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“…In [4], the results of theoretical and experimental studies of the emergence of negative differential resistance in the diode structures are based on the p-n-junction in a strong microwave field.…”

Section: Introductionmentioning

confidence: 99%

Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field

Gulyamov¹,

Dadamirzaev²

2015

WJCMP

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The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.

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