Negative differential resistance through real-space electron transfer

Abstract

A new mechanism is proposed to obtain negative differential resistance in layered heterostructures for conduction parallel to the interface. The mechanism is based on hot-electron thermionic emission from high-mobility GaAs into low-mobility AlxGa1−xAs. Preliminary calculations indicate that high peak-to-valley ratios can be achieved. The transfer speed is estimated to be of the order of 10−11 s. We further show that the concept of hot-electron thermionic emission can be applicable to a variety of devices.

Energy and momentum relaxation dynamics of hot holes in modulation doped GaInNAs/GaAs quantum wells

“…We believe ͑and show below͒ that at the saturation threshold electric field F ϳ 6 kV/ cm at T L = 13 K, the nonequilibrium temperature of holes is high enough to cause a significant population of holes to transfer in real space via thermionic emission into the GaAs barriers. 18,19 At low lattice temperature ͑T L =13 K͒ and low electric fields, the holes reside primarily in the GaInNAs potential wells in equilibrium, where they experience reduced local impurity scattering. This coupled with the lack of nitrogen related alloy scattering and low effective mass ͑0.105m 0 ͒ ͑Ref.…”

“…18 Therefore, a negative differential mobility ͑NDM͒ caused by real-space transfer ͑RST͒ of hot holes and accompanied by high-frequency space charge oscillations may be achieved similar to those predicted by Schöll and co-workers. [19][20][21][22] The aim of the work presented here is to give the results of our studies on the longitudinal nonequilibrium hole transport in p-type modulation doped Ga 1−x In x N y As 1−y / GaAs QWs and to explain the observed current-voltage characteristic using a simplified analytical model taking into account the effect of real-space hole transfer and the consequent impact ionization in both the barrier and QW.…”

Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

“…5(b) and (c), NCFETs show negative differential resistance (NDR) [16] [30], which is a distinctive feature that is not seen in the conventional MOSFET. In a Gunn diode, known as a transferred-electron device, NDR is induced by the transition of electrons from a high-mobility valley to a low-mobility valley [31]. In the case of NCFETs, however, it occurs due to the reduction of current caused by DIBR.…”

Attenuation of picosecond electrical pulses by two-dimensional electron gases integrated in coplanar striplines

“…The frequency-dependent losses in our model are not only due to the conducting 2DEG, but also due to skin effect losses and radiation losses, which play a major role above a few hundred GHz. 18 As a check of our model for the sample containing the 2DEG and for excluding complications which are specific for high field transport in 2DEGs such as real space transfer 19,20,21 and parallel conduction, 22 we also performed measurements in a sample containing a modulation-doped quantum well ͑MDQW͒. Here, line dimensions of wϭsϭ20 m and a gap size of 10 m were used.…”