Negative Magnetoresistance Behaviour and Variable Range Hopping Conduction in Insulating NbSi Amorphous Alloys at Very Low Temperature with aagnetic Field

Abstract

We present results of an experimental study of magnetoresistance (MR) in insulating NbSi amorphous alloys sample showing Variable Range Hopping (VRH) conductivity. The MR is found to be negative in a wide range of low temperature (4.2-20 K) and in the range of moderate magnetic fields (0-4 T). We made tentative analysis using three theoretical models which are the model of quantum interference, the model of Zeeman effect and the model of localized magnetic moment

Synthesis of Two-Dimensional Nb1.33C (MXene) with Randomly Distributed Vacancies by Etching of the Quaternary Solid Solution (Nb2/3Sc1/3)2AlC MAX Phase

“…Magnetoresistance (MR) measurements, performed at 10 K, showed negative MR, which is in contradistinction with the MR measurements on other MXene compounds exhibiting the VRH mechanism. , However, other disordered materials showing VRH, such as In 2 O 3– x , and Si doped in GaAs have been reported to exhibit negative MR. − The negative MR for materials having VRH conduction mechanisms has been ascribed to several reasons such as quantum interference, the Zeeman effect, or localized magnetic moments . These comments notwithstanding, much more work, which is beyond the scope of this paper, is needed to obtain a deeper understanding of conduction in our films.…”

Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films

“…Cr, Mn or Fe combined with ZnO produce negative or positive MR changes depending of the magnetic field intensity. The ZnO doping with Ni or Cu produces only negative changes with the increase of the magnetic field [6,17]. The experimental results reported in the literature are not conclusive in this respect, more studies are necessary to clarify the origin of the mentioned MR behavior.…”

Features in low-temperature electrical resistivity of amorphous Cd3As2 films due to hopping conductivity with changing activation energy

“…A weak localization of electrons in two-dimensional systems which falls off in the presence of a magnetic field can also result in a negative MR in a low field [24][25][26][27][28]. Besides, the negative MR can be also considered as specific sign of the variable-range hopping conductivity [28][29][30][31][32].…”