Negative magnetoresistance in the regime of hopping conduction through p states at quantum dots

Abstract

The magnetoresistance in the system of quantum dots with hopping conduction and filling factor 2 < ν < 3 in the limit of small quantum dots has been considered. In this case, hopping conduction is determined by p states. It has been shown that the system exhibits negative magnetoresistance associated with a change in the wavefunctions of p states in a magnetic field. This mechanism of magnetoresistance is linear in magnetic field in a certain range of fields and can compete with the known interference mechanism of magnetoresis tance. The magnitude of this magnetoresistance is independent of the temperature at fairly low temperatures and increases with a decrease in the size of a quantum dot.