2023 7th IEEE Electron Devices Technology &Amp; Manufacturing Conference (EDTM) 2023
DOI: 10.1109/edtm55494.2023.10102952
|View full text |Cite
|
Sign up to set email alerts
|

Negative-Thermal-Expansion Gate Electrode to Introduce Tensile Strain into the Channel of MOSFETs for Mobility Enhancement

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 8 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?