Neon Ion Beam Lithography (NIBL)

Winston, Donald; Manfrinato, Vitor R.; Nicaise, Samuel M.; Cheong, Lin Lee; Duan, Huigao; Ferranti, David C.; Marshman, Jeff; McVey, Shawn; Stern, Lewis; Notte, John; Berggren, Karl K.

doi:10.1021/nl202447n

Cited by 73 publications

(60 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…FIB also offers functionalities of imaging, material removal, and deposition ( Figure 6). Neon ions were introduced for a low-fluence, high-resolution lithography, reaching 7 nm half-pitch feature sizes with 1 ion/nm 2 dose, at which a ~10 3 times more efficient fabrication was achieved compared with standard Ga-ion 30 keV exposure [84].…”

Section: Focused Ion Beamsmentioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

View full text Add to dashboard Cite

The evolution of optical microscopy from an imaging technique into a tool for materials modification and fabrication is now being repeated with other characterization techniques, including scanning electron microscopy (SEM), focused ion beam (FIB) milling/imaging, and atomic force microscopy (AFM). Fabrication and in situ imaging of materials undergoing a three-dimensional (3D) nano-structuring within a 1−100 nm resolution window is required for future manufacturing of devices. This level of precision is critically in enabling the cross-over between different device platforms (e.g. from electronics to micro-/ nano-fluidics and/or photonics) within future devices that will be interfacing with biological and molecular systems in a 3D fashion. Prospective trends in electron, ion, and nano-tip based fabrication techniques are presented.

show abstract

Section: Focused Ion Beamsmentioning

confidence: 99%

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Winston et al have shown that NIBL is capable of patterning lines with a 7 nm line width. 68 Figure 10(a) displays a developed grating created from NIBL. Most notably, the dose required to create the line structures in the HSQ were $10Â lower than that of He þ ions and $1000Â lower than electrons.…”

Section: Helium and Neon Ion Beam Lithographymentioning

confidence: 99%

Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams

Stanford

Lewis

Mahady

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

View full text Add to dashboard Cite

Focused ion beam nanoscale synthesis has emerged as a critical tool for selected area nanofabrication. Helium and neon ion beams from the gas field ion source have recently demonstrated unparalleled resolution among other scanning ion beams. In this review, the authors focus on the nanoscale synthesis applications for these ion species which have been demonstrated to date. The applications and recent work can broadly be grouped into the following categories: (1) Monte Carlo simulations, (2) direct-write milling or sputtering, (3) ion beam lithography, (4) selective ion implantation or defect introduction, and (5) gas-assisted processing. A special emphasis is given toward using He þ and Ne þ for the processing of two dimensional materials, as several groups have demonstrated promising results. Finally, the authors will discuss the future outlook of He þ and Ne þ nanoprocessing techniques and applications.

show abstract

“…Both LSF and PSF exhibit powerlaw-like dependences (i.e. high contrast) 10 due to high sensitivity of CAR to He-ions and spatial resolution. 6 Furthermore, it is worth mentioning that it has been reported that optical critical dimension (OCD) scatterometry provides a more accurate measure of CD, for a valid number of similar features, than CD-SEM metrology.…”

Section: Point-spread Function For Shibl In Carmentioning

confidence: 99%

Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

et al. 2015

View full text Add to dashboard Cite

This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in a EUV chemically amplified resist. The model employs a point-spread function to account for all physical and chemical phenomena involved in the resist activation. Ion shot noise effects are accounted for using Poisson statistics. Our model shows a good agreement with earlier single-pixel SHIBL experiments for determining line width as a function of dose for a desired line-and-space pattern. Furthermore, we propose optimized-pixel-dose SHIBL to improve exposure latitude, LCDU and LWR. Dose optimization is advantageous to single-pixel exposure when the feature size is at least about twice the width of the FWHM of the point-spread function. We confirm this by comparing our modeling results for single-pixel and optimizedpixel-dose exposure modes for line-and-space patterns.

show abstract

Neon Ion Beam Lithography (NIBL)

Cited by 73 publications

References 31 publications

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Tipping solutions: emerging 3D nano-fabrication/ -imaging technologies

Review Article: Advanced nanoscale patterning and material synthesis with gas field helium and neon ion beams

Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

Contact Info

Product

Resources

About