Positional and thermal parameters for PtSi and PtGe have been refined by the full-matrix least-squares method using 123 and 131 three-dimensional intensity data, reslzectively. The compounds are isostructural with MnP, space group Pbnm, four formulae per cell, with lattice constants a=5"916 (1), b= 5.577 (1), c=3.587 (1)/~ for PtSi, and a=6"084 (2), b=5.719 (2), c=3.697 (1)/~ for PtGe. Linear thermal expansivities have been determined from the lattice constants measured as a function of temperature over the interval 100-900 °K for PtSi and 298-900 °K for PtGe. An anomaly in the expansivities for PtSi occurs at 400°K.