Neural Dielet: A 0.4 mm$^{3}$ Battery-Less Crystal-Less Neural-Recording System on Die Achieving 1.6 cm Backscatter Range With 2 mm ×2 mm On-Chip Antenna

Yang, Changgui; Zhang, Yunshan; Chang, Ziyi; Li, Zhuhao; Gao, Huan; Luo, Yuxuan; Xu, Kedi; Pan, Gang; Zhao, Bo

doi:10.1109/tbcas.2022.3232783

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…Despite these limitations, several systems in the literature have been proposed using a range of technologies to achieve the on-chip integration of rectifiers and antennas, and the most common being complementary metal-oxide semiconductor (CMOS) processes with a wide array of examples in [ 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ], which have target applications in biomedical implants, radio frequency identification (RFID), or the Internet of Things. A range of different rectifier design choices is used in these works, such as a cross-connected full-wave CMOS rectifier, a general voltage double using a diode-connected CMOS transistor, or a Dickson rectifier.…”

Section: Introductionmentioning

confidence: 99%

Miniature Integrated 2.4 GHz Rectennas Using Novel Tunnel Diodes

Walsh

Muttlak

Sadeghi

et al. 2023

Sensors

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This work presents the design, fabrication, and measured results of a fully integrated miniature rectenna using a novel tunnel diode known as the Asymmetrical Spacer Layer Tunnel (ASPAT). The term rectenna is an abbreviation for a rectifying antenna, a device with a rectifier and antenna coexisting as a single design. The ASPAT is the centrepiece of the rectifier used for its strong temperature independence, zero bias, and high dynamic range. The antenna is designed to be impedance matched with the rectifier, eliminating the need for a matching network and saving valuable real estate on the gallium arsenide (GaAs) substrate. The antenna is fully integrated with the rectifier on a single chip, thus enabling antenna miniaturisation due to the high dielectric constant of GaAs and spiral design. This miniaturisation enables the design to be fabricated economically on a GaAs substrate whilst being comparable in size to a 15-gauge needle, thus unlocking applications in medical implants. The design presented here has a total die size of 4 × 1.2 mm2, with a maximum measured output voltage of 0.97 V and a 20 dBm single-tone 2.35 GHz signal transmitted 5 cm away from the rectenna.

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