Neural Network for Electrothermal Circuit Model of SiC Power MOSFET

Chvála, Aleš; Cernaj, L.; Marek, Juraj; Pribytny, Patrik; Kozarik, Jozef; Donoval, D.

doi:10.1109/asdam50306.2020.9393854

Cited by 1 publication

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Coefficients g M , g D , k TH are determined from electrical parameters at operating point (V GS , V DS , T A ) and are required to be independent of th entire device thermal parameters [14].…”

Section: Average Temperature Active Area Electrical Modelmentioning

confidence: 99%

“…In the FET case, the initial operating point is shifted to the saturation voltage V DS,SAT with active area average temperature T A,SAT whereas relatively low g D for V DS > V DS,SAT exhibits minor impact on T A determination especially for long gated FET [12]. Initial s/l ratio at T A ≈ T A,SAT is calculated utilizing equation (14).…”

Section: Dissipated Power Variationmentioning

confidence: 99%

See 1 more Smart Citation

Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor

Florovic¹,

Kováč²,

Chvála³

et al. 2021

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We propose a novel model approach for temperature evaluation in the channel region of a InAlN/AlN/gallium nitride high electron mobility transistor (HEMT) due to self-heating effects. The heat transfer in a HEMT device has been investigated experimentally by the nearby temperature sensor and compared by theoretical models solved by both numerical and analytical methods. The average temperature of the channel area of almost 160 °C for dissipated power of 2 W was determined using the drain-source current variation analysis. The electrical and thermal behavioral numerical model under quasi-static conditions have been used to describe the HEMT device. In contrast, the one-dimensional thermal model for analytical evaluation has been proposed as an alternative approach. Surprisingly, the experimental results verified not only the validity of precise numerical simulation but also the simplified analytical model that makes it a reliable tool even for complex electronic devices.

show abstract

Section: Average Temperature Active Area Electrical Modelmentioning

confidence: 99%

Section: Dissipated Power Variationmentioning

confidence: 99%