Silicon nanopowders are investigated intensively for application in microelectronics and energy among them. [1][2][3] However, for the moment the control of the product high quality and the processing costs are limiting their breakthrough. RF-thermal plasmas could respond to both criteria as it is a continuous process achieving high production volume while ensuring a good synthesis control from the gaseous phase. The absence of electrodes for igniting the plasma and the controlled process atmosphere of RF-plasmas are beneficial for producing high purity materials. Typically a supersaturated gaseous phase containing the precursor is condensed rapidly after nucleation took place. The nanoparticles grow then subsequently by coagulation and coalescence. [4] This rapid condensation is achieved either by natural thermal gradients in the plasma or by quenching using a cold source (gas or cold surface) or by using an expansion. [5][6][7][8] This paper addresses the development of a specific quenching nozzle design combining rapid cooling with an expansion for controlling the size of silicon nanopowders processed by an inductively coupled plasma (ICP). The design of the quenching device has been supported by computational fluid dynamic (CFD) calculations aiming at modelling the plasma properties like among them the temperature and the velocity of the powderfree plasma. The modelling has been validated by in-situ plasma characterization using an enthalpy-probe coupled to a mass spectrometer. The produced nanopowders were collected either on a filter membrane, or directly in the gas phase using an on-line and in-situ sampling system made of a TEM-grid fixed on a moveable support and then ex-situ characterized by XRD, Raman, microscopy and surface specific area measurement using the BET technique.
Experimental Set-up and Plasma CharacterizationThe ICP apparatus devoted to the synthesis of nanoparticles has been already described in details elsewhere. [9] Its dimensions and its geometry have been introduced in the CFD modelling code. Plasma gases typically used for processing are argon and hydrogen. This reducing atmosphere is generally used to ensure oxide-free particles. The plasma torch (PL-35, Tekna) has been also modelled with the different gas inlets; carrier gas (Ar), central gas (Ar) and the sheath gas that is a mixture of Ar and H 2 . The gas composition is referred in the following as carrier gas-central gas-sheath gas (Ar/H 2 ) in slpm. An enthalpy-probe (ENT-476, Tekna) has been used to measure in-situ the enthalpy and the velocity of the plasma in powder-free conditions at different radial positions and heights in the reactor (z=0 corresponds to the plasma torch exhaust). The plasma properties have been calculated outside the electromagnetic field, meaning below the torch exhaust where the quenching should be performed. Therefore, in a first approximation, the plasma process has been considered as a steady state process with the plasma being modelled as a heat source with a homogeneous power distribution located ...