2019
DOI: 10.1109/led.2019.2914882
|View full text |Cite
|
Sign up to set email alerts
|

Neuro-Mimetic Dynamics of a Ferroelectric FET-Based Spiking Neuron

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
36
0

Year Published

2019
2019
2024
2024

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 47 publications
(36 citation statements)
references
References 17 publications
0
36
0
Order By: Relevance
“…More importantly, this neuron model is capable of modeling multiple neural dynamics that has been observed in cortical and thalamic neurons. We can use two gate voltages, V GM and V GF , of two transistors to imitate the excitatory and inhibitory synaptic inputs, respectively of biological neurons, and thus enable various neural firing patterns (Fang et al, 2019). In this section, we describe a compact behavior model of the FeFET based spiking neuron.…”
Section: Methodsmentioning
confidence: 99%
See 3 more Smart Citations
“…More importantly, this neuron model is capable of modeling multiple neural dynamics that has been observed in cortical and thalamic neurons. We can use two gate voltages, V GM and V GF , of two transistors to imitate the excitatory and inhibitory synaptic inputs, respectively of biological neurons, and thus enable various neural firing patterns (Fang et al, 2019). In this section, we describe a compact behavior model of the FeFET based spiking neuron.…”
Section: Methodsmentioning
confidence: 99%
“…We focus our model on the critical voltages when FeFET switches and the current that charges and discharges the capacitors. Details of the model have been presented elsewhere (Fang et al, 2019) and we summarize the key findings here for the sake of completion. It is also important to point out the key neuronal dynamics that are achievable in the FeFET neuron, that can be harnessed in the SI-SNN computational framework.…”
Section: Methodsmentioning
confidence: 99%
See 2 more Smart Citations
“…This three-terminal device has recently been operated into memory arrays with 28 nm CMOS technology [114] and exhibits a strong potential for the development of 3D structures [115]. Also, it has been operated to replicate synapse [116] and neuron [117,118] functions, which, combined with 3D integration opportunity, makes it a strong candidate for neuromorphic computing applications. Figure 12b illustrates the device structure of the ECRAM consisting of an MOS transistor where a solid-state electrolyte based on inorganic materials, such as lithium phosphorous oxynitride (LiPON) [108,119], or organic materials, such as poly (3, 4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) [120], is used as the gate dielectric.…”
Section: Memristive Devices With Three-terminal Structurementioning
confidence: 99%