Time-domain analog computing with transient states (TACT) approaches have been proposed to realize high performance artificial intelligence (AI) processors, which have over 100 times higher energy efficiency than the latest digital AI processors. Such approaches require analog memory devices that can hold and control very high resistance on the order of giga-ohms to tera-ohms, with nonvolatility and rectification. Memory devices with a field-effect transistor (FET) structure can operate in a subthreshold region to realize such high resistance, and can also rectify the current using FET operation. In this paper, we propose using ferroelectric-gate FETs (FeFETs) as a candidate for such devices. We design crossbar circuit architectures for using them, and show measurement results for device characteristics as analog memory devices with pulse control based on TACT approaches, and evaluation results for weighted-sum calculation operation in proof-of-concept FeFET circuits.