Neuromorphic thermal-electric circuits based on phase-change VO2 thin-film memristor elements

Abstract

The basis of the powerful operation of the brain is the variability of neuron operation, i.e., it can be digital or analog, and the logic operation of a neuron-based system can be parallel and series. The challenge is to set up an artificial intelligent architecture that mimics neuro-biological architectures present in the nervous system. Our proposed new active device (phonon transistor = phonsistor) and thermal electric logic circuit (TELC) seem to be appropriate devices for neuron modeling. Key elements of the phonsistor and TELC are memristors realized by VO 2 phase change output resistors integrated with dissipating elements as inputs. These components are coupled to each other by thermal and/or electrical effects. On short distances, the information can be carried by heat diffusion and on longer distances by electrical signals. This is a similarity with human neurons where the information is carried by diffusing neurotransmitter molecules on short distances and electrically by the axons on longer distances. For example, very new ideas are presented of neuromorphic circuits for mimicking the biological neuron synapse operation and the action potential generation. Further similarities with biological neural systems are the auto-oscillation phenomenon with chaotic properties, the ability of integrating subthreshold excitations within the thermal time constant, and the memory effect of the memristive components. The TELC should be compatible with CMOS technology, as the realization of both systems utilizes conventional thin-film technology steps at similar temperature ranges. The physical appearance and construction of the TELC gate are also similar to the neuron.

Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging

“…Therefore, alternative semiconductor technologies, such as memristors, are gaining attention from the wider scientific community. Unlike conventional MOSFETs, the semiconductor materials used for these devices are transition metal oxides, such as TaO 2 [414][415][416][417], HfO 2 [418][419][420][421][422][423][424], VO 2 [425,426], NbO 2 [427][428][429], and LiNbO 2 [430]. The electrical resistances of these oxides depend on the process of redox reactions, in some cases compounded with temperature-assisted hopping [431].…”

Origin of Current‐Controlled Negative Differential Resistance Modes and the Emergence of Composite Characteristics with High Complexity

“…Current-controlled negative differential resistance (NDR) is of increasing interest for braininspired computing based on a number of promising applications, including trigger comparators 1 , self-sustained and chaotic oscillators [2][3][4][5][6][7] , threshold logic devices 8,9 and the emulation of biological neuronal dynamics 10,11 . Since the functionality of such devices is determined by the specific form of their current-voltage characteristics, it is important to understand the physical basis of switching and how it is affected by device structure and operating conditions.…”

Millimeter- and Terahertz-wave stochastic sensors based on reversible insulator-to-metal transition in vanadium dioxide

“…VO 2 is a strongly correlated electron material which undergoes a first-order IMT at 340 K from a low-temperature monoclinic insulating state to a high-temperature rutile metallic state, accompanied by structural, electrical, and optical changes 1,2 . The potential of IMT along with its sensitivity to external stimuli makes it promising for a variety of applications in resistive memories [3][4][5] , optical switches 6,7 , sensors [8][9][10] , tunable photonic devices 11,12 , brain-inspired and neuromorphic architectures [13][14][15] . We target the sensor application in the frequency range of mm-wave and THz.…”