Neutron Displacement Damage Cross Section in GaN: Numerical Evaluations and Differences With Si

Abstract

The displacement damage cross-section of the neutron -GaN interaction is calculated in the energy range from meV to GeV. Different calculation methods are used and discussed to estimate the modeling uncertainty. The Non-ionizing energy loss (NIEL) and the relative damage factors are also deduced. Differences with the neutron -Silicon interactions are presented and the impacts on the estimation of Total Non-Ionizing Dose (TNID) levels are evaluated as a function of neutron energy.

Comparative Radiation Response of GaN and Ga2O3 Exposed to Ground-Level Neutrons

“…In recent years, the interest in these wide-bandgap materials for space and avionics applications, or for applications in extreme conditions, has led to the emergence of dedicated studies of the radiation response of technologies based on these materials, especially with respect to the response to thermal or fast neutrons [14][15][16][17][18][19][20]. In this context, the aim of this work is to investigate the radiation response of both GaN and Ga 2 O 3 exposed to the natural radiation background at sea level consisting of atmospheric neutrons with energies ranging from thermal to GeV.…”